The invention belongs to the technical field of
crystal material preparation, and particularly relates to a method for growing
sapphire crystals by a wide
seed crystal edge-defined film-fed
crystal growth method, which comprises the following steps of: firstly, preparing an Al2O3-based
raw material through multi-step
sintering, carrying out
acid etching microstructuring treatment on R / M surface seed crystals, arranging an array type feeding seam mold above a
crucible during charging, and carrying out vacuum replacement for three times, so as to obtain a
sapphire crystal; a gradient temperature field is established through three-area independent
temperature control, seeding is performed after melt is immersed into a mold, the growth process comprises seeding, shouldering and equal-
diameter growth,
wide diameter expansion and equal-
diameter growth of crystals are realized by accurately controlling the pulling rate, the
crucible rising speed and the three-section power of a middle heating area, and the crystals are automatically separated from the mold; and high-temperature, medium-temperature and low-temperature three-stage gradient annealing is carried out under
argon protection to release stress and stabilize the structure, so that the transverse
temperature gradient can be accurately controlled below 5 DEG C / cm, the problem of large
temperature difference between the edge and the center during wide
seed crystal growth is solved, and the stability of the
solid-
liquid interface shape and the uniformity of
crystal growth are ensured.