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BiFeO3 thin film and preparation method thereof

A technology of thin film and tetragonal phase, applied in the field of BiFeO3 thin film and its preparation, can solve the problems of large film damage and uneven structure, and achieve the effect of precise and controllable size

Active Publication Date: 2018-09-21
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method of preparing thin films with different substrates can only grow different phases of BiFeO when preparing 3 film, and the method of etching with focused ion beam is to use BiFeO 3 The film is etched into a nano-island structure, but the structure etched by this etching method is not uniform. For BiFeO 3 Membrane damage is also great

Method used

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  • BiFeO3 thin film and preparation method thereof
  • BiFeO3 thin film and preparation method thereof
  • BiFeO3 thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1, preparation BiFeO 3 film 1

[0029] 1) In the pulsed laser deposition system, the pulsed laser energy is set to 300mJ, the frequency is 8Hz, the oxygen pressure is 15Pa, and the growth temperature is 700°C. 3 A layer of Ce with a thickness of 10 nm was epitaxially grown on the substrate x Ca 1-x MnO 3 (x=0.04) as the bottom electrode layer. Then epitaxially grow a layer of BiFeO with a thickness of 50nm on the bottom electrode layer 3 Floor.

[0030] 2) Use alcohol to dilute polystyrene beads with a diameter of 1000nm, and then disperse them on the surface of deionized water to form monolayer polystyrene beads, and finally transfer the monolayer polystyrene beads to the BiFeO obtained in step 1). 3 layer.

[0031] 3) Using oxygen plasma to split the single-layer polystyrene pellets, the splitting time is 30 min.

[0032] 4) Set the cathode current to 15A, the anode voltage to 50V, the screen voltage to 300V, the ion acceleration voltage to 250V, th...

Embodiment 2

[0034] Embodiment two, preparation BiFeO 3 film 2

[0035] 1) In the pulsed laser deposition system, the pulsed laser energy is set to 300mJ, the frequency is 8Hz, the oxygen pressure is 15Pa, and the growth temperature is 700°C. 3 A layer of Ce with a thickness of 10 nm was epitaxially grown on the substrate x Ca 1-x MnO 3 (x=0.04) as the bottom electrode layer. Then epitaxially grow a layer of BiFeO with a thickness of 50nm on the bottom electrode layer 3 Floor.

[0036] 2) Use alcohol to dilute polystyrene beads with a diameter of 500 nm, and then disperse them on the surface of deionized water to form monolayer polystyrene beads, and finally transfer the monolayer polystyrene beads to the BiFeO obtained in step 1). 3 layer.

[0037] 3) Using oxygen plasma to split the single-layer polystyrene pellets, the splitting time is 30 min.

[0038] 4) Set the cathode current to 15A, the anode voltage to 50V, the screen voltage to 300V, the ion acceleration voltage to 250V, ...

Embodiment 3

[0040] Embodiment three, preparation BiFeO 3 film 3

[0041] 1) In the pulsed laser deposition system, the pulsed laser energy is set to 300mJ, the frequency is 8Hz, the oxygen pressure is 15Pa, and the growth temperature is 700°C. 3 A layer of Ce with a thickness of 10 nm was epitaxially grown on the substrate x Ca 1-x MnO 3 (x=0.04) as the bottom electrode layer. Then epitaxially grow a layer of BiFeO with a thickness of 50nm on the bottom electrode layer 3 Floor.

[0042] 2) Use alcohol to dilute polystyrene beads with a diameter of 250 nm, and then disperse them on the surface of deionized water to form monolayer polystyrene beads, and finally transfer the monolayer polystyrene beads to the BiFeO obtained in step 1). 3 layer.

[0043] 3) Using oxygen plasma to split the single-layer polystyrene pellets, the splitting time is 10 min.

[0044] 4) Set the cathode current to 15A, the anode voltage to 50V, the screen voltage to 300V, the ion acceleration voltage to 250V...

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Abstract

The present invention provides a BiFeO3 thin film and a preparation method thereof. The BiFeO3 thin film comprises BiFeO3 nanometer points, and the BiFeO3 nanometer points comprise rhombus phase / square phase mixed phases and pure square phases, wherein the proportion of the rhombus phase / square phase mixed phases is 50-80%. The preparation method comprises the following steps of: (1) performing epitaxial growth of a bottom electrode layer on a single crystal substrate, performing epitaxial growth of a BiFeO3 layer on the bottom electrode layer, and paying a single layer of polrvinyl benzene small balls at the surface of the BiFeO3 layer; (2) employing oxygen plasmas to segment the single layer of polrvinyl benzene small balls; (3) employing an argon ion etching beam to etch the BiFeO3 layer; and (4) employing chloroform to remove the single layer of polrvinyl benzene small balls to obtain a BiFeO3 thin film. The BiFeO3 layer is etched to the nanometer points for deformation induced transformation, the polrvinyl benzene small balls with different diameters are used to obtain nanometer points with different diameters, the etching time of the argon ion etching beam is controlled to obtain the different etching depths so as to achieve the purpose of accurate control without damaging samples.

Description

technical field [0001] The invention belongs to the field of magnetoelectric multiferroic materials, in particular to a BiFeO 3 Thin films and methods for their preparation. Background technique [0002] Magnetoelectric multiferroic materials are multifunctional materials that can realize the coexistence and mutual coupling of electricity and magnetism. Under the action of an external magnetic field, the magnetoelectric multiferroic material can achieve electric polarization response; under the action of an external electric field, the magnetoelectric multiferroic material can achieve magnetic spin ordering. Therefore, magnetoelectric multiferroic materials can often derive rich and colorful quantum phenomena. The unique properties of magnetoelectric multiferroic materials make them have great application potential in the development and design of new quantum information functional devices in the future. [0003] Among many magnetoelectric multiferroic materials, perovski...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/10H01L43/12B82Y30/00H10N50/01
CPCB82Y30/00H10N50/85H10N50/01
Inventor 陈德杨孙菲田国陈超邓雄高兴森
Owner SOUTH CHINA NORMAL UNIVERSITY
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