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A transfer method of uniform graphene film

A technology of graphene film and transfer method, which is applied in the direction of graphene, chemical instruments and methods, nano-carbon, etc., can solve the problem of not meeting the high conductivity requirements of transparent electrodes, the influence of transparent electrode uniformity and conductivity, and the graphene surface Problems such as uneven resistance, to avoid graphene gaps, good flatness, and low cost

Active Publication Date: 2021-06-08
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of removing PMMA, it is inevitable to cause gaps in graphene, which reduce the channels for charge transmission, thus making the surface resistance of graphene non-uniform.
At the same time, according to the experimental results, the size of the surface resistance is proportional to the size of the graphene gap, that is, the larger the gap area, the larger the graphene surface resistance and the smaller the conductivity, which is not enough for transparent electrodes to have high conductivity. required
Similarly, graphene films grown on certain metals by chemical vapor deposition replicate the morphology of metal substrates, and PMMA is used to transfer graphene from these metal substrates, and the uneven microstructure of metal substrates also causes The flatness of graphene is not good, which also has a great impact on the uniformity and conductivity of graphene transparent electrodes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The technical solutions of the present invention will be further described below in conjunction with specific examples:

[0021] A transfer method of a uniform graphene film, comprising the steps of:

[0022] (1) The surface of the 25 um thick copper foil is grown by chemical vapor deposition to obtain continuous graphene, and the spin coating concentration of the graphene surface is 100 mg / ml PMMA, and after the spin coating, it is placed on the constant temperature table in 170. Bake at ° C for 5 min;

[0023] (2) After grilling, the unfrotted PMMA is placed in a plasma washing machine to treat 1min, remove graphene on the back copper foil, then plasticizing the PMMA / graphene / copper foil in the concentration of 5 mol / L. FECL 3 The copper foil is etched in the solution, etching 30 min, then transferred to the deionized water for 10 min, then transferred to the new 5 mol / L of FeCl 3 The residual copper foil is etched in the solution, etching 2 h, removes the floc ...

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Abstract

The invention discloses a method for transferring a uniform graphene film. A silicon wafer with an oxide layer is used as an intermediary transfer substrate, and the graphene film obtained by transfer has better smoothness. At the same time, when graphene is made into a transparent electrode, after graphene / PMMA is transferred to the target substrate together, graphene is placed on the top of PMMA / substrate without removing PMMA, thereby completely avoiding the generation of gaps in graphene. The continuity of the film is better, and the transparent electrode has better uniformity and high conductivity. The invention provides the transfer method of the new graphene film with high electrical conductivity and uniform transparent electrode, which has simple process and low cost.

Description

Technical field [0001] The present invention belongs to the technical field of conductive materials, and more particularly to a metastasis method of uniform graphene film. Background technique [0002] Transparent electrodes with high optical transparency, conductivity, and uniformity are an important part of the touch screen, display, solar cell, and light emitting diode devices. Glosene is a carbonaceous new material that is closely stacked by a single layer or several layers of carbon atoms into a two-dimensional honeycomb structure, wherein between the carbon atoms pass SP. 2 Hybrid bond, each carbon atom forms a strong sigma key with adjacent three carbon atoms, which is very secure, forming a stable hexagonal shape, and has excellent light transmittance, conductivity. These characteristics make graphene an ideal alternative material for the indium tin oxide (ITO) of the conventional transparent electrode material, in particular, successfully grown high-quality single-orient...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B2204/22C01B32/186C01B32/194
Inventor 王敏杨金华徐志勇贾良鹏
Owner HEFEI UNIV OF TECH
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