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A Controllable Thinning Method of Two-Dimensional Atomic Crystals of Transition Metal Chalcogenides

A technology of two-dimensional atomic crystals and transition metal chalcogenides, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as high energy consumption, defects in the etching process, and quality degradation of two-dimensional atomic crystals. Achieve the effect of simple operation and high production efficiency

Active Publication Date: 2020-01-10
SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the plasma thinning method can improve the yield of thin-layer samples, the process parameters are complicated, the energy consumption is high, and the etching process introduces defects, resulting in a decline in the quality of the two-dimensional atomic crystal.

Method used

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  • A Controllable Thinning Method of Two-Dimensional Atomic Crystals of Transition Metal Chalcogenides
  • A Controllable Thinning Method of Two-Dimensional Atomic Crystals of Transition Metal Chalcogenides
  • A Controllable Thinning Method of Two-Dimensional Atomic Crystals of Transition Metal Chalcogenides

Examples

Experimental program
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Effect test

Embodiment 1

[0050] This embodiment provides a method for thinning a two-dimensional atomic crystal of a transition metal chalcogenide, the method being:

[0051] Use tape to paste the block repeatedly 8 times, transfer the sample pasted on the tape to a silicon wafer coated with an oxide layer on the surface, soak the silicon wafer with the sample in 1mmol / L chloroauric acid solution at 25°C soak in water for 30 minutes, then soak the silicon wafer in water for 30 minutes to remove the residual moisture on the surface of the silicon wafer to obtain the MoS 2 Two-dimensional atomic crystals.

[0052] Usually optical microscope contrast is the most concise and effective method to judge the number of layers of two-dimensional materials, such as figure 1 As shown, the entire MoS before thinning 2 The layer is thicker and the light transmittance is lower. Compared with the sample before treatment, such as figure 2 The sample after the treatment shown has obvious thinning phenomenon, and mo...

Embodiment 2

[0054] This embodiment provides a method for thinning a two-dimensional atomic crystal of a transition metal chalcogenide, the method being:

[0055] Using adhesive tape on MoS 2 The single crystal of the two-dimensional material was repeatedly pasted 5 times, and the sample pasted on the tape was transferred to a silicon wafer coated with an oxide layer on the surface, and the silicon wafer with the sample was soaked in 0.5mmol / L chlorine at 50°C in the gold acid solution for 40 minutes, and then soak the silicon chip in water for 40 minutes to remove the residual moisture on the surface of the silicon chip to obtain the two-dimensional atomic crystal.

[0056] Similar to the evidence in Example 1, the processed samples were Figure 6 , the optical microscope contrast has been improved, such as Figure 7 , the peak difference of Raman characteristic peaks of molybdenum sulfide samples is reduced, such as Figure 8 , the photoluminescence spectral intensity also has a certa...

Embodiment 3

[0058] This embodiment provides a method for thinning a two-dimensional atomic crystal of a transition metal chalcogenide, the method being:

[0059] Use tape to WS 2 The two-dimensional material single crystal was repeatedly pasted 8 times, and the sample pasted on the tape was transferred to a silicon wafer coated with an oxide layer on the surface, and the silicon wafer with the sample was soaked in 0.5mmol / L chlorine at 25°C in the gold acid solution for 30 minutes, and then soak the silicon chip in water for 30 minutes to remove the residual moisture on the surface of the silicon chip to obtain the two-dimensional atomic crystal.

[0060] Similar to the evidence in Example 1, the tungsten sulfide samples before treatment were as Figure 9 It appears yellowish white, because the sample is too thick and has a great reflection effect on the incident light of the optical microscope, so it appears brighter in the grayscale image, while the processed sample is as follows Fig...

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Abstract

The invention provides a controllable thinning method of a transition metal chalcogenide two-dimensional atomic crystal. The thinning method comprises the following steps: soaking a laminated transition metal chalcogenide material into a chloroautric acid solution for a certain time for the first time, taking out the laminated transition metal chalcogenide material and soaking the laminated transition metal chalcogenide material into water for a certain time; and removing the residual water from the surface of the sample to obtain the thinned transition metal chalcogenide material atomic crystal. According to the thinning method, the laminated layer is treated by the chloroautric acid, so that the laminated layer can be thinned; the method has the advantages of simplicity in operation, high thinning speed, high controllability, no damage to the quality of the sample and the like; and by the method, the thin-layer large-area transition metal chalcogenide two-dimensional atomic crystal can be prepared.

Description

technical field [0001] The invention belongs to the field of new materials, and in particular relates to a thinning method of a two-dimensional atomic crystal, in particular to a controllable thinning method of a transition metal chalcogenide two-dimensional atomic crystal. Background technique [0002] Two-dimensional atomic crystals represented by graphene have attracted extensive attention from academia and industry due to their unique optical, electrical, thermal, and mechanical properties. Two-dimensional atomic crystals are a class of materials with a layered structure in which the layers are bonded by weak van der Waals forces and the atoms in the plane are bonded by strong chemical bonds. Among them, transition metal chalcogenides (MX 2 ) This type of two-dimensional material has a rich variety of materials, a suitable and adjustable bandgap width (1.0-2.0eV) with the number of layers, and a high carrier mobility (200-500cm 2 V -1 the s -1 ), so that transition m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/64C30B29/46C30B33/00
CPCC30B29/46C30B29/64C30B33/00
Inventor 刘碧录任洁
Owner SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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