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Composition for hard mask

A technology of composition and hard mask, which is applied in the direction of photosensitive materials used in optomechanical devices, can solve the problem of photoresist layer or photoresist pattern consumption or increased etching amount, and the inability to ensure photosensitive Etching resistance of resist layer or photoresist pattern, etc., to achieve the effect of improving flatness, excellent flatness, improving heat resistance and etch resistance

Active Publication Date: 2021-07-27
DONGWOO FINE CHEM CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, the etching of the above-mentioned ARC layer will be added, so the consumption or etching amount of the above-mentioned photoresist layer or photoresist pattern may increase.
In addition, when the thickness of the above-mentioned etching target film increases or the amount of etching required for forming a desired pattern increases, it may not be possible to ensure sufficient etching resistance of the required above-mentioned photoresist layer or photoresist pattern. sex

Method used

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  • Composition for hard mask
  • Composition for hard mask
  • Composition for hard mask

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0181] Through the evaluation methods described later, the corrosion resistance, solubility and flatness of the hard mask formed of the compositions of Table 1 were evaluated. The evaluation results are shown in Table 2 below.

[0182] (1) Evaluation of corrosion resistance

[0183] The compositions of the examples and the comparative examples were applied to the silicon wafer by a spin coating method, and 60 seconds were baked at 200 ° C to form a thickness. Membrane. ARF was applied on the respective films formed, and the exposure apparatus of the company was exposed using ASML (XT: 1450G, Na 0.93), and then TMAH (2.38 wt) was exposed using ASML (XT: 1450G, Na 0.93). % Aqueous solutions were developed, respectively, and achieved 60 nm of lines and gaps (LINE and SPACE) patterns.

[0184] The resulting patterning test piece is further solidified for 60 seconds at 110 ° C, using CHF 3 / Cf 4 The mixed gas was carried out for 20 second dry etching of the test piece, and the cross ...

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PUM

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Abstract

The present invention provides a composition for a hard mask, which includes a polymer of a pyrene-based linking compound and an aromatic compound containing a hydroxyl group, and a solvent. A hard mask having improved etching resistance, solubility, and planarity can be formed from the composition for a hard mask.

Description

Technical field [0001] The present invention relates to a hard mask composition composition. More specifically, the present invention relates to a hard mask composition comprising an aromatic condensate or a compound. Background technique [0002] For example, in the field of semiconductor manufacturing, microelectronics, etc., the integration of structures such as circuits, wirings, and insulated patterns is continuously increased. Therefore, the micropathetized photolithography process for the above structure is also developed together. [0003] In general, the photoresist layer is formed to form a photoresist layer on the etching target film, and a photoresist pattern is formed by exposure and development steps. Next, the photoresist pattern is used as an etching mask, and the etching target film is partially removed, thereby forming a predetermined pattern. After performing image transfer for the etching object film, the photoresist pattern can be removed by ashing and / or s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11
CPCG03F7/11
Inventor 梁敦植梁振锡朴根永崔汉永崔相俊
Owner DONGWOO FINE CHEM CO LTD