Thin film deposition device for volatile and corrosive substance and catalytic reaction test device based on ultrahigh vacuum condition

Abstract

The invention relates to a thin film deposition device for a volatile and corrosive substance and catalytic reaction test device based on the ultrahigh vacuum condition. The thin film deposition device for the volatile and corrosive substance based on the ultrahigh vacuum condition comprises a main sample transfer cavity, a growth cavity, a three-dimensional sample control console, an evaporationsource and the like which can be used for the deposition of thin films of the volatile and corrosive substance, wherein a cavity external assembly comprises a gas inlet system and a gas exhaust unit,and the gas inlet system can be used for introducing the chemical atmosphere required by deposition. The catalytic reaction test device based on the ultrahigh vacuum condition comprises a reaction cavity and a rapid sample feeding chamber, wherein the reaction cavity comprises a sample temperature control table, a sample heating source adopts a replaceable heating sheet so that background interference in the reaction can be reduced and accurate catalytic reaction activity tests at different temperatures can be realized; and a cavity external assembly comprises a gas inlet system, and the gas inlet system can be used for introducing chemical reaction gas. The thin film deposition device and catalytic reaction test device are suitable for preparation of the thin films of the various volatileand corrosive substances, and are connected with various ultrahigh vacuum analysis instruments so as to realize accurate test of the reaction activity of the catalyst.

Description

technical field [0001] The invention relates to a test device for thin film deposition and catalytic reaction of volatile corrosive substances under ultra-high vacuum conditions, and belongs to the technical field of thin film deposition and catalytic activity testing. Background technique [0002] Generally speaking, the growth and preparation process of thin films is usually grown by molecular beam epitaxy. It is necessary to evaporate the precursor of the target element to the gaseous state, and then deposit it on the surface of the sample by molecular beam sputtering in a certain chemical atmosphere. Then analyze the surface structure. Using sophisticated surface instruments operating under ultra-high vacuum conditions, such as photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM), the atomic structure of thin films can be obtained A clear and exact pointer can provide valuable...

AI Technical Summary

Problems solved by technology

The reason is that these volatile compounds have a very high vapor pressure at a lower temperature, which will cause the entire ultra-high vacuum chamber to be easily polluted by volatile substances. On the other hand, the corrosive gas that needs to be introduced, Has a strong corrosive effect on electronic and metal components

The combined action of the two leads to the destruction and difficulty of maintaining ultra-high vacuum, and also causes irreversible failures such as circuit short circuit and pollution in vacuum precision instruments.

This makes the preparation of volatile compounds and the precise analysis of the surface structure very difficult, and also restricts the progress of material characterization and synthesis preparation technology

[0004] On the other hand, many surface analysis techniques can give precise structural information on the surface, but they can only operate in the ultra-high vacuum range, while conventional chemical processes are at close to atmospheric pressure or higher pressure

This makes it impossible to test catalytic reactions in ultra-high vacuum systems

However, the existing commercial catalytic reaction chambers usually use radiation sources for integral heating, which will cause the background of the chamber to be heated together, resulting in serious uncontrollable background pollution.

These background contaminations are likely to alter the reactivity of clean test samples, thus causing inaccurate activity measurements

This also makes it difficult to directly correlate the obtained sample surface structure information with the activity of the catalytic reaction, which also restricts the exact correlation between the structure and performance of the catalyst sample.

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