Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A test device for thin film deposition and catalytic reaction of volatile corrosive substances under ultra-high vacuum conditions

A thin film deposition device and corrosive substance technology, applied in vacuum evaporation plating, chemical analysis by catalysis, coating, etc., can solve the problems of inaccurate activity testing, restricting structure-performance, background pollution, etc., to avoid Pollution and Negative Effects, Achieve Pollution-Free Transfer, Effect of Avoiding Background Pollution

Active Publication Date: 2020-09-01
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason is that these volatile compounds have a very high vapor pressure at a lower temperature, which will cause the entire ultra-high vacuum chamber to be easily polluted by volatile substances. On the other hand, the corrosive gas that needs to be introduced, Has a strong corrosive effect on electronic and metal components
The combined action of the two leads to the destruction and difficulty of maintaining ultra-high vacuum, and also causes irreversible failures such as circuit short circuit and pollution in vacuum precision instruments.
This makes the preparation of volatile compounds and the precise analysis of the surface structure very difficult, and also restricts the progress of material characterization and synthesis preparation technology
[0004] On the other hand, many surface analysis techniques can give precise structural information on the surface, but they can only operate in the ultra-high vacuum range, while conventional chemical processes are at close to atmospheric pressure or higher pressure
This makes it impossible to test catalytic reactions in ultra-high vacuum systems
However, the existing commercial catalytic reaction chambers usually use radiation sources for integral heating, which will cause the background of the chamber to be heated together, resulting in serious uncontrollable background pollution.
These background contaminations are likely to alter the reactivity of clean test samples, thus causing inaccurate activity measurements
This also makes it difficult to directly correlate the obtained sample surface structure information with the activity of the catalytic reaction, which also restricts the exact correlation between the structure and performance of the catalyst sample.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A test device for thin film deposition and catalytic reaction of volatile corrosive substances under ultra-high vacuum conditions
  • A test device for thin film deposition and catalytic reaction of volatile corrosive substances under ultra-high vacuum conditions
  • A test device for thin film deposition and catalytic reaction of volatile corrosive substances under ultra-high vacuum conditions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] The thin film deposition device based on volatile and corrosive substances under ultra-high vacuum conditions can deposit low-melting point metal Zn oxide ZnO thin film samples, and then transfer them to the ultra-high vacuum system for structural analysis without affecting the ultra-high vacuum system.

[0088] The deposition device based on the volatile sample thin film under ultra-high vacuum condition is connected with the ultra-high vacuum system. Raise the Zn evaporation source to a suitable temperature (~200)°C for degassing. The clean substrate samples (such as Pt(111), Au(111), Cu(111), etc.) prepared in the ultra-high vacuum system can be directly transferred to the growth chamber of the device through the sample transfer rod, and the equipment and the ultra-high Gate valves for vacuum systems. Adjust the position of the substrate sample and the evaporation source through the three-dimensional operation table. Introduce high-purity O through a vacuum leak va...

Embodiment 2

[0090] Based on the thin film deposition device of volatile corrosive substances under ultra-high vacuum conditions, corrosive H 2 MoS in S atmosphere 2 The deposition of thin film samples is then introduced into the ultra-high vacuum system for structural analysis without affecting the ultra-high vacuum system.

[0091] The thin film deposition device for volatile and corrosive substances based on ultra-high vacuum conditions is connected with an ultra-high vacuum system. In the growth chamber, the ion source and Ar can be used to etch the gold single crystal in situ to obtain the Au single crystal substrate that meets the requirements. Raise the Mo source to a suitable temperature (~1800°C) for degassing. Adjust the position of the substrate sample and the evaporation source through the three-dimensional operation table. Inject high-purity H through a vacuum leak valve 2 S(99.999%) to 1×10 -6 mbar, deposited MoS 2 Film to proper coverage. then close H 2 S gas. The c...

Embodiment 3

[0094] In the present invention, based on the catalytic reaction test device under the ultra-high vacuum condition, the catalytic reaction test of the sample in the ultra-high vacuum system under the condition of close to the atmospheric pressure can be carried out, and the reacted sample is then introduced into the ultra-high vacuum system for structural analysis without the need for ultra-high vacuum. The vacuum system is affected. The catalytic reaction test device based on the ultra-high vacuum condition is connected with the ultra-high vacuum system. The clean substrate samples (such as FeO / Pt(111), FeO / Au(111)) prepared in the ultra-high vacuum system can be directly transferred to the reaction chamber through the sample transfer rod, and the connection between the device and the ultra-high vacuum system is closed. Gate valve. Open the gas inlet in the reaction chamber to introduce CO and O at an atmospheric pressure 2 The mixed gas, record the initial reaction gas pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a test device for volatile and corrosive substance thin film deposition and catalytic reaction based on ultra-high vacuum conditions. The sample console, evaporation source, etc. can be used for the deposition of volatile and corrosive substances. The test device includes a reaction chamber and a fast sampling chamber. The reaction chamber includes a temperature-controlled sample stage. The sample heating source is relatively local replaceable, which can reduce the background interference in the reaction and realize accurate catalytic reaction activity testing at different temperatures. The chamber The extracorporeal components include an air intake system, which can be fed with a chemical reaction gas. The invention is applicable to the preparation of films of various volatile and corrosive substances, and is connected with various ultra-high vacuum analysis instruments to realize accurate testing of catalyst reactivity.

Description

technical field [0001] The invention relates to a test device for thin film deposition and catalytic reaction of volatile corrosive substances under ultra-high vacuum conditions, and belongs to the technical field of thin film deposition and catalytic activity testing. Background technique [0002] Generally speaking, the growth and preparation process of thin films is usually grown by molecular beam epitaxy. It is necessary to evaporate the precursor of the target element to the gaseous state, and then deposit it on the surface of the sample by molecular beam sputtering in a certain chemical atmosphere. Then analyze the surface structure. Using sophisticated surface instruments operating under ultra-high vacuum conditions, such as photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM), the atomic structure of thin films can be obtained A clear and exact pointer can provide valuable...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C14/54G01N31/10
CPCC23C14/0021C23C14/24C23C14/54G01N31/10
Inventor 杨帆包信和刘云张毅黄武根
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products