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Preparation method of polishing pad

A polishing pad and polishing layer technology, applied in the field of polishing pads, can solve the problems of uneven heat release, difficult heat release, uneven heat distribution, etc., and achieve the effects of good grinding stability, reduced scratches, and simple process

Active Publication Date: 2018-11-06
HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the uneven heat distribution of the system during the pouring and gelation process, that is, the overall heat distribution of the casting body, the degree of expansion of the microspheres is inconsistent, resulting in uneven density distribution from the middle to the periphery of the entire system.
At present, there is a formula to limit the temperature rise in the casting material, which can improve the uniformity of the porous polishing pad in the entire polyurethane casting. However, the problem of difficult heat release and uneven heat release in the process cannot be completely solved only from the formula. On the one hand, controllable thermal expansion will lead to poor repeatability of process control, which will reduce the density pass rate of the entire system. In addition, different density distributions on the same plane may affect the stability of polishing during polishing
Therefore, it is urgent to find a way to solve the problem of uneven heat distribution of the cast body from the perspective of process control.

Method used

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  • Preparation method of polishing pad
  • Preparation method of polishing pad
  • Preparation method of polishing pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The prepolymer obtained by reacting the polyol and the isocyanate containing 6.5-8.5% by weight of unreacted NCO as raw materials, the curing agent and the microspheres are mixed to obtain the raw material to be poured for use; Prepare the second cushion for subsequent use;

[0035] A cooling chamber (the outer wall is coated with polytetrafluoroethylene coating) is set in the mold, and the raw materials to be poured are poured into the mould. The cooling water in the cooling chamber continues to exchange heat with the raw materials in the mold, and the raw materials to be poured After gelling, the first cushion layer is formed, and the temperature T of the cooling water in the cooling chamber needs to satisfy the following two formulas at the same time:

[0036] Formula 1):

[0037] Wherein, the distance from the cooling chamber to the center of the polishing layer is L, the diameter of the polishing layer is D, and the unit of T is °C.

[0038] When the cooling ca...

Embodiment 2

[0046] The difference with embodiment 1 is:

[0047] The setting positions of the cooling cavity are different: a cooling cavity with a diameter of 4 cm is set at the center of the mold, and then the center of the mold is used as the center of circle, and four cooling cavities with a diameter of 1.5 cm are equally divided and fixed at a distance of 10 cm around the center of the mold, namely The central angles corresponding to every two second accommodation cavities are 90°, then the average diameter of the cooling cavity is 5cm, and the average diameter of the cooling cavity is the sum of the areas of the circular cross-sections of the five cooling cavities, which corresponds to the average diameter of the calculated circle It is obtained that the temperature of the cooling water in the cooling chamber at the center is 30°C, and the temperature of the cooling water in the four cooling chambers of the outer ring is 38°C;

[0048] Among the filled second pads, one of the four s...

Embodiment 3

[0052] The difference from Example 2 is that two cooling cavities located on the outer ring and two cooling cavities located on the inner ring are evenly arranged on the mold, the distance from the cooling cavity of the inner ring to the center of the circle is 10cm, and the distance from the cooling cavity of the outer ring to the center of the circle is 20cm. There are four cooling cavities in total, and the diameter of each cooling cavity is 1 cm. The temperature of the cooling water in the cooling chamber is 40°C.

[0053] Among the filled second cushion layers 2 , the two second cushion layers 2 of the inner ring are made of window material, and the two second cushion layers 2 of the outer ring are made of the same material as the first cushion layer 1 . The raw material composition of the window material refers to the prior art, and will not be described in detail here.

[0054] The timing of taking out the cooling cavity is: after the first cushion is solidified, take ...

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Abstract

The invention discloses a preparation method of a polishing pad. The problems that in the existing polishing preparation process, heat dissipation is uneven, consequently, the polishing pad is unevenin density, and grinding stability is affected are solved. According to the technical scheme, the preparation method comprises the steps that a cooling cavity which contains a cooking agent or is filled with the cooling agent is formed in a mould, and then raw materials are poured into the mould to obtain a first pad layer; and the cooling cavity containing the cooling agent is taken out from thefirst pad layer, a hole formed after the cooling cavity is taken out is filled with a second pad layer which is the same as the hole in shape, and the first pad layer and the second pad layer are jointly solidified or bonded to obtain the polishing pad. The preparation method is simple in technique, easy and convenient to control, the temperature is released effectively and evenly in the production process, and the prepared polishing pad is even in density and good in grinding stability.

Description

technical field [0001] The invention relates to the field of polishing pads, in particular to a preparation method of the polishing pads. Background technique [0002] Chemical-mechanical planar polishing or chemical-mechanical polishing (CMP) is currently the most commonly used technique for surface polishing of workpieces. CMP is a technology that combines chemical etching and mechanical removal, and is also the most commonly used technology for planarization of semiconductor wafers. At present, in the conventional CMP process, it is installed on the bracket assembly of the equipment, and at the same time, it sets the position where it contacts with the polishing pad during the polishing process. During the polishing process, the wafer is exerted a controllable pressure against the polishing pad, and the polishing pad is rotated relative to the wafer by external driving force. During the rotation process, there is continuous dripping of polishing liquid, so that the surf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24D18/00B29C39/38
Inventor 朱顺全吴晓茜张季平车丽媛
Owner HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD