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Single-phase ceramic target and preparation method and application thereof

A single-phase ceramic and target material technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of bismuth element loss, difficulty, high sintering temperature, etc., and achieve high saturation magnetization and equipment requirements The effect of low, high production efficiency

Active Publication Date: 2018-11-13
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For bismuth ferrite ceramics, it is quite difficult to prepare ceramics with single phase, good insulation and excellent ferroelectric properties, but it is even more difficult to exhibit ferromagnetism at room temperature on this basis.
[0003] The existing reported single-phase ceramic target preparation methods with similar components require long grinding time, high sintering temperature and long sintering time
The melting point of bismuth element is 544.45K. When sintered at a higher temperature, it is easy to volatilize, causing the loss of bismuth element, and it is also very easy to appear other phases to make the ceramic impure.
And in the specific preparation process, the single-phase ceramic target material that is dense and uniform and exhibits ferromagnetism at room temperature is complicated in technology and difficult to sinter. After adding different dopant ions, the Curie temperature will decrease, and the problem of heterogeneity

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  • Single-phase ceramic target and preparation method and application thereof
  • Single-phase ceramic target and preparation method and application thereof
  • Single-phase ceramic target and preparation method and application thereof

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preparation example Construction

[0031] The present invention provides a single-phase ceramic target preparation method. The preparation method may include: first weighing raw materials according to an appropriate calculated amount, mixing the weighed raw materials, adding an organic solvent therein, and then performing ball milling and mixing; Calcining the powder obtained after ball mill mixing, and sieving after calcination; pressing the powder obtained after sieving into an embryo body, and pre-sintering the embryo body; then grinding the pre-sintered embryo body crushed, and adding an organic solvent to it for ball milling and mixing; the powder obtained after ball milling and mixing is pressed again into an embryo body. The whole process of pre-sintering and grinding the green body after pre-sintering, adding an organic solvent for ball milling and mixing to form the green body can be repeated once or more times. Finally, the obtained green body is pre-sintered at a low temperature and then shaped and s...

Embodiment 1

[0051] 1. Make Bi with a purity of more than 99.99% 2 o 3 、TiO 2 , Fe 2 o 3 , MgO, CaCO 3 Equal high-purity powders are weighed and dosed according to the stoichiometric ratio, because Bi 2 o 3 It is easy to volatilize during the sintering process, and it needs to add 7% more than the stoichiometric ratio.

[0052] 2. Add the ingredients in step 1 to anhydrous ethanol to make them evenly mixed, and use a ball mill to fully grind them for 45 minutes to make the raw materials mix evenly.

[0053] 3. Calcining the powder obtained in step 2, the calcination temperature is 675-750K, the sintering time is 2h, and the powder is sieved after calcination.

[0054] 4. Put the powder obtained in step 3 into a mold, and use cold isostatic pressing to form an embryo, and the pressure is 40-70Mpa.

[0055] 5. Put the ceramic embryo obtained in step 4 into a muffle furnace for pre-sintering, the sintering temperature is 850-900K, and the sintering time is 3 hours.

[0056] 6. Grind ...

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Abstract

The invention discloses a preparation method of a single-phase ceramic target. The preparation method comprises the steps of weighing raw materials, adding the raw materials into an organic solvent, ball milling and mixing uniformly, then calcining and screening; pressing screened powder into a base, and pre-sintering the base; grinding the pre-sintered base and adding the base into the organic solvent, ball milling and mixing uniformly, pressing the obtained powder to obtain a base, and pre-sintering, wherein the process is performed once or for many times; and sintering the base at a temperature of 1023-1173K to shape the target. Through adoption of the preparation method, time for grinding, calcining and sintering is short, the operation temperature is low, and a sintering additive is not added in sintering. The method has low requirements on equipment, has high preparation efficiency, and can help save energy and lower cost. The invention further discloses the single-phase ceramictarget and application thereof in an electronic device. The prepared ceramic target is uniform and compact, has ferromagnetism at both room temperature and low temperature, and can be used for preparing a film material in the electronic device.

Description

technical field [0001] The invention relates to the technical field of material preparation, and more specifically, to a single-phase ceramic target and its preparation method and application. Background technique [0002] Multiferroic material is a new type of multifunctional material with two or more ferrotypes such as ferromagnetism, ferroelectricity and ferroelasticity at the same time, and due to the coupling between various ferrotypes, it will also produce piezomagnetic effect, The magnetoelectric effect and magnetron polarization reversal effects have broad application prospects in the fields of data storage, spintronics, and microelectronics, and have attracted widespread attention. However, the Curie temperature of most single-phase multiferroic materials is lower than room temperature, and ferromagnetism cannot be obtained at room temperature. Bismuth ferrite (BiFeO 3 ) has a relatively high Curie transition temperature (Tc=1103K), and is currently one of the ver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462C04B35/04C04B35/057C04B35/26C04B35/453C04B35/622C04B35/46C04B35/48C04B35/01C04B35/64C23C14/34
CPCC04B35/01C04B35/04C04B35/057C04B35/26C04B35/453C04B35/46C04B35/462C04B35/48C04B35/622C04B35/64C23C14/3414
Inventor 贾婷婷刘聪姚竣翔樊子冉程振祥
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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