Preparation method of patterned substrate LED modified by metal nanoparticles

Abstract

The invention discloses a preparation method of a patterned substrate LED modified by metal nanoparticles, which comprises the steps of 1) forming a metal film on a patterned substrate, rapidly heating up to a temperature of 750-1200 DEG C, and annealing for 1-10min so as to form metal nanoparticles on the patterned substrate; 2) transferring to an MOCVD growth chamber, and growing a buffer layer;3) growing u-type GaN, n-type GaN, InGaN / GaN quantum wells, an AlGaN electron blocking layer and p-type GaN so as to obtain a patterned substrate LED modified by the metal nanoparticles. According tothe preparation method, the metal nanoparticles are utilized to serve as a mask, the epitaxial lateral overgrowth of the buffer layer is improved, the dislocation density is reduced, and an effect ofimproving the epitaxy is achieved; the metal nanoparticles are utilized, thereby being conducive to reducing the thickness of the buffer layer; and the Au or Ag nanoparticles have a good reflection characteristic to light, thereby transmitting the light emitted by an active layer and light reflected by the surface of the LED, and improving the light emitting efficiency of LED devices.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a method for preparing patterned substrate LEDs decorated with metal nanoparticles. Background technique [0002] In order to improve the epitaxy effect of epitaxially growing GaN thin films on patterned sapphire substrates, it is usually: (1) by using a thicker AlN or AlGaN buffer layer; Overlay pattern; (3) Introducing a layer of AlN or SiN insertion layer into the buffer layer. But these methods all have certain shortcoming, for example the deficiency of method (1) and (3) is that the thickness of buffer layer is bigger, and the raw material needed increases, and can increase cost; The deficiency of method (2) is that process is complicated, to AlN When overlaying, the sample needs to be taken out, and then put in for growth after the etching is completed; and the etching process is also relatively complicated, requiring steps such as glue coating, photolithography, ...

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Problems solved by technology

But these methods all have certain shortcoming, for example the deficiency of method (1) and (3) is that the thickness of buffer layer is bigger, and the raw material needed increases, and can increase cost; The deficiency of method (2) is that process is complicated, to AlN When overlaying, the sample needs to be taken out, and then put in for growth after the etching is completed; and the etching process is also relatively complicated, requiring steps such as glue coating, photolithography, cleaning, ICP etching, and cleaning, which greatly increased processing costs

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