Composite electron transfer layer perovskite solar cell prepared by using atomic layer deposition method and preparation method thereof

A technology of atomic layer deposition and electron transport layer, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to effectively block the diffusion of perovskite components and top electrodes, and the destruction of perovskite active layers

Inactive Publication Date: 2018-11-13
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the atomic layer deposition method will use precursors such as water and titanium tetrachloride during the deposition process, which will lead to the destruction of the perovskite active layer.
Fullerene derivative e

Method used

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  • Composite electron transfer layer perovskite solar cell prepared by using atomic layer deposition method and preparation method thereof
  • Composite electron transfer layer perovskite solar cell prepared by using atomic layer deposition method and preparation method thereof
  • Composite electron transfer layer perovskite solar cell prepared by using atomic layer deposition method and preparation method thereof

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Effect test

Embodiment 1

[0023] The transparent conductive substrate FTO was cleaned with acetone, ethanol, and isopropanol, and a 2.0% by mass ethanol solution of nickel acetate was coated to form a film by spin coating, and annealed at 400° C. for 30 minutes. Weigh 550mg PbI 2 , 20mg CsI, dissolved it in 1mL DMF solvent, and prepared 3mL isopropanol iodoformamidine solution. On the NiO substrate, PbI was first prepared by spin coating 2 The thin film was annealed at 70°C for 10min, and then the isopropanol solution of iodoformidin was spin-coated on PbI 2 On the thin film, the perovskite photoactive layer can be prepared after annealing at 160 °C for 15 min. A solution of a fullerene derivative in a non-polar solvent is first coated on the perovskite layer. Using the atomic layer deposition system, under the condition of the substrate temperature of 100 ℃, using TiCl 4 and water as the precursor to deposit a layer of TiO with a thickness of about 50 nm after multiple cycles 2 layer, and placed ...

Embodiment 2

[0026] The transparent conductive substrate FTO was cleaned with acetone, ethanol, and isopropanol, and a 2.0% by mass ethanol solution of nickel acetate was coated to form a film by spin coating, and annealed at 400° C. for 30 minutes. Weigh 550mg PbI 2 , 20mg CsI, dissolved it in 1mL DMF solvent, and prepared 3mL isopropanol iodoformamidine solution. On the NiO substrate, PbI was first prepared by spin coating 2 The thin film was annealed at 70°C for 10min, and then the isopropanol solution of iodoformidin was spin-coated on PbI 2 On the thin film, the perovskite photoactive layer can be prepared after annealing at 160 °C for 15 min. A solution of a fullerene derivative in a non-polar solvent is first coated on the perovskite layer. Using the atomic layer deposition system, under the condition of the substrate temperature of 100 ℃, using TiCl 4 and water as the precursor to deposit a layer of TiO with a thickness of about 50 nm after multiple cycles 2 layer, under high ...

Embodiment 3

[0029] The transparent conductive substrate FTO was cleaned with acetone, ethanol, and isopropanol, and a 2.0% by mass ethanol solution of nickel acetate was coated to form a film by spin coating, and annealed at 400° C. for 30 minutes. Weigh 550mg PbI 2 , 20mg CsI, dissolved it in 1mL DMF solvent, and prepared 3mL isopropanol iodoformamidine solution. On the NiO substrate, PbI was first prepared by spin coating 2 The thin film was annealed at 70°C for 10min, and then the isopropanol solution of iodoformidin was spin-coated on PbI 2 On the thin film, the perovskite photoactive layer can be prepared after annealing at 160 °C for 15 min. A solution of a fullerene derivative in a non-polar solvent is first coated on the perovskite layer. Using the atomic layer deposition system, under the condition of the substrate temperature of 100 ℃, using TiCl 4 and water as the precursor to deposit a layer of TiO with a thickness of about 50 nm after multiple cycles 2 layer, under high ...

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Abstract

The invention discloses a composite electron transfer layer perovskite solar cell prepared by using an atomic layer deposition method and a preparation method thereof. The composite electron transferlayer perovskite solar cell is characterized in that a fullerene/titanium dioxide composite electron transfer layer prepared by using the atomic layer deposition method is used, the structural features of the cell are transparent top electrode and metal counter electrode, and small organic molecules, polymers and inorganic matters are used as hole transfer materials. The perovskite solar cell hasextremely high heat stability, and moreover the photovoltaic conversion performance of the perovskite solar cell also can be preferable.

Description

technical field [0001] The application of the present invention relates to a fullerene / titanium dioxide composite electron transport layer prepared by atomic layer deposition [0002] Perovskite solar cells and methods for their preparation. Background technique [0003] Organic-inorganic hybrid perovskite solar cells are a new type of solar cells developed in recent years with extremely high photoelectric conversion efficiency comparable to commercial silicon-based and copper indium gallium selenide solar cells, because they can be directly prepared by solution method , has obvious cost advantages. However, because its components are ions with large size and low charge, its structural stability is very poor. Its components are easy to migrate under conditions such as light, heat stress, and electric field. Generally, conventional small organic molecules or polymer transport layers cannot effectively block the contact caused by the diffusion of perovskite components and m...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/151Y02E10/549Y02P70/50
Inventor 周欢萍王立刚严纯华孙聆东
Owner PEKING UNIV
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