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Low resistance layered structure orthorhombic phase moo 3-x Film Preparation Method

A layered structure, moo3-x technology, applied in the field of electronics, to achieve the effect of promoting kinetic process, simple manufacturing process, and increasing interlayer spacing

Active Publication Date: 2020-04-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few domestic and foreign researches on low-resistance layered structure α-MoO 3-x Research reports on thin film materials

Method used

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  • Low resistance layered structure orthorhombic phase moo <sub>3-x</sub> Film Preparation Method
  • Low resistance layered structure orthorhombic phase moo <sub>3-x</sub> Film Preparation Method
  • Low resistance layered structure orthorhombic phase moo <sub>3-x</sub> Film Preparation Method

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preparation example Construction

[0019] see figure 1 As shown, the present invention provides a low-resistance layered structure α-MoO 3-x The preparation method of thin film, comprises the steps:

[0020] Step 1: Form a thin film on the substrate by vacuum evaporation, the material of the substrate is glass or indium tin oxide (ITO), and the vacuum degree of the vacuum evaporator of the vacuum evaporation method is 4.1-4.5×10 -4 Pa, the voltage applied to both ends of the tungsten boat of the vacuum evaporator is 14-16V, the thickness of the film grown on the substrate by vacuum evaporation is 28-32nm, and the raw material MoO with a thickness of 28-32nm is grown 3 The weight of the powder is 0.0060-0.0080g, and the film growth rate is 0.08-0.12nm / s;

[0021] Step 2: The first step of heat treatment is performed on the film in the atmosphere. The first step of heat treatment is to put the film into an infrared lamp heating furnace and heat it to 350°C-400°C at a heating rate of 2.4°C / s. 5min, then the fil...

Embodiment 1

[0027] Step 1: Film formation by vacuum evaporation

[0028] a. Substrate cleaning. Corning Eagle XG glass and single crystal silicon (100) substrate were ultrasonically cleaned in alcohol, acetone and alcohol for 10 minutes each. with dry N 2 blow dry.

[0029] b. Weigh the raw materials. Use an electronic balance to weigh 0.0060-0.0080g MoO on the medicine pack paper 3 powder and pour it into a tungsten boat.

[0030] c. Thin film deposition

[0031] 1. Place glass and silicon substrates in a high vacuum evaporation device (Sanvac RD-1250R). Vacuum to 4.1-4.5×10 -4 Pa.

[0032] 2. Slowly increase the voltage across the tungsten boat to about 14-16V, observe when the tungsten boat turns red, open the shutter, and start timing at the same time to deposit a film at a growth rate of 0.08-0.12nm / s.

[0033] 3. When the film reaches 28-32nm, close the shutter and slowly reduce the voltage to 0V.

[0034] 4. When the temperature drops to around room temperature, take out th...

Embodiment 2

[0049] 1. Film formation by vacuum evaporation method

[0050] a. Substrate cleaning. The ITO substrate was ultrasonically cleaned in alcohol for 5 min. with dry N 2 blow dry.

[0051] b. Weigh the raw materials. Use an electronic balance to weigh 0.0060-0.0080g MoO on the medicine pack paper 3 powder and pour it into a tungsten boat.

[0052] c. Thin film deposition

[0053] 1. Place the ITO substrate in a high vacuum evaporation device (Sanvac RD-1250R). Vacuum to 4.1-4.5×10 -4 Pa.

[0054] 2. Slowly increase the voltage across the tungsten boat to about 14-16V. When the tungsten boat turns red, open the shutter and start timing at the same time to deposit a film at a growth rate of about 0.08-0.12nm / s.

[0055] 3. When the film reaches 28-32nm, close the shutter and slowly reduce the voltage to 0V.

[0056] 4. When the temperature drops to around room temperature, take out the sample.

[0057] 2. Atmospheric atmosphere heat treatment:

[0058] MoO to be deposite...

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Abstract

The invention relates to a preparation method of a low-resistance layered structure orthogonal phase MoO3-x thin film. The method comprises the following steps that step 1, a thin film is formed on asubstrate by utilizing a vacuum evaporation method; step 2, a first-step heat treatment is carried out on the thin film in an atmospheric atmosphere; and step 3, a second-step heat treatment is carried out on the thin film in a nitrogen atmosphere to complete preparation. According to the method, the preparation method of the low-resistance layered structure orthogonal phase MoO3-x thin film has the advantages of being simple and convenient in manufacturing process and the like; according to the method, the vacuum evaporation method is adopted, moreover, two-steps heat treatment is carried outso that the alpha-MoO3-x thin film with a layered structure and a lower resistivity can be obtained; the MoO3-x thin film material can be widely applied to a double-layer capacitor, a lithium ion battery, an organic photodiode, a thin-film solar cell and other optoelectronic devices.

Description

technical field [0001] The invention belongs to the field of electronic technology, and relates to a low-resistance layered structure orthogonal phase MoO that can be applied to optoelectronic devices such as electric double-layer capacitors, lithium-ion batteries, organic photodiodes, and thin-film solar cells. 3-x Preparation method of thin film material. Background technique [0002] Molybdenum oxide (MoO 3 ) has a wide range of applications in lubricants, electrochromic systems, battery electrodes, catalysts, sensors, and optoelectronic devices due to its bandgap width of about 3eV, work function of about 6.86eV, and ionization energy of about 9.68eV. Orthorhombic MoO 3 (α-MoO 3 ) thin film material with MoO 6 The regular octahedral layered structure is considered to be an ideal material for lithium-ion battery electrodes and hole-transporting layers of organic photodiodes and thin-film solar cells. However, MoO with the stoichiometric 3 Thin films typically have u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/26C23C14/08C23C14/58
CPCC23C14/083C23C14/26C23C14/5806
Inventor 孟磊杨涛
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI