Ultra-short-channel metal-semiconductor-metal type photodetector and manufacturing method thereof

Abstract

The invention relating to the field of light detecting technology discloses an ultra-short-channel metal-semiconductor-metal type photodetector and a manufacturing method thereof. A photodetector channel is constructed by using two-dimensional molybdenum disulfide in a vertical direction; and with a tunneling current generated by an ultra-short channel, light in different wavelength ranges is detected. The optical dark current is large, the light response speed is fast, and the light response is high. The detector is composed of an insulating substrate, a bottom electrode formed on the insulating substrate, a channel completely covering the bottom electrode, and a top electrode arranged above the channel. The insulating substrate is a one of a polyethylene glycol terephthalate film, a sapphire substrate and a silicon wafer with an oxide layer; the electrode is a metal electrode; and the channel is made of the two-dimensional molybdenum disulfide material. The channel has the width of 0.7 to 2.2nm. The ultra-short-channel metal-semiconductor-metal type photodetector for optical detection has the characteristics of high flexibility and transparency.

Description

technical field [0001] The invention relates to the field of optoelectronic information technology, and relates to a photodetector, in particular to an ultrashort channel metal-semiconductor-metal photodetector and a manufacturing method thereof. Background technique [0002] The principle of a photodetector is that radiation causes a change in the conductivity of the irradiated material. According to different detectable light bands, light detectors can be divided into ultraviolet light detectors, visible light detectors and infrared light detectors. Ultraviolet light detectors are mainly used in missile early warning and guidance, ultraviolet communication, ozone monitoring, open flame detection, biomedical analysis, etc. Visible and near-infrared light detectors are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc. Infrared light detectors are mainly used in infrared remote sensing and infrared thermal imaging. Opt...

AI Technical Summary

Problems solved by technology

However, this type of photodetection usually faces the problem of high contact barrier between metal and two-dimensional molybdenum disulfide, and the photo-dark current is relatively small, usually in the range of 10 -9 A magnitude, difficult to detect

Moreover, the photodetectors in the prior art have the problems of long response time, low photoresponsivity and low quantum efficiency

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