High color rendering white light source structure and manufacturing method thereof

The invention provides a high color rendering white light source structure which comprises a white light epitaxial structure. The white light epitaxial structure is orderly provided with a diamond substrate, a GaBi transition layer, an N-GaN contact layer, a In0.19Ga0.81N/GaN multiple-quantum-well light-emitting layer, a P-GaN contact layer, an N-GaN cascade layer, an N-GaN contact layer, a In0.48Ga0.52N/GaN multiple-quantum-well light-emitting layer, and a P-GaN contact layer from the bottom to top, and an N electrode layer and a P electrode layer are disposed on the layer. According to the invention, the binding of a phosphor is removed, the high color rendering white light source structure has the advantages of good color rendering property, good stability, good luminescence quality, the improvement of working stability and service life, the saving of a part of the packaging process, the allowance of the growth of a white light crystal, the simplification of the production process of a whole industrial chain, the great improvement of production efficiency and the easy realization of industrialized mass production, the structure is formed in one time by self-made glue molding, sothe internal light stress of the white light source structure is low, the warpage deformation is also small, the light effect is improved, the process is optimized, the mechanical performance is stable, the product reliability is high, and the cost is greatly reduced.