High color rendering white light source structure and manufacturing method thereof

A white light source and high color rendering technology, which is applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low efficiency of ultraviolet light chips and RGB phosphors, difficulty in meeting low color temperature lighting requirements, and complex drive circuits for chip performance. , to improve the working stability and service life, save part of the packaging process, and achieve the effect of small warping deformation

Inactive Publication Date: 2018-12-07
SHENZHEN GUANGMAO ELECTRONICS
6 Cites 1 Cited by

AI-Extracted Technical Summary

Problems solved by technology

At present, blue light is usually used to excite yellow phosphors to produce white light. Because the white light produced by exciting yellow phosphors with blue light has poor color rendering and poor stability
[0003] At present, there are three common processes for realizing white LEDs in production as follows: YAG phosphor is excited on the blue LED chip, and the yellow-green light and blue light it emits are synthesized into white light. However, the spectrum of white light emitted by this technology is missing For the red part, the color rendering is poor, and it is difficult to meet the lighting requirements of low color temperature; using multiple RGB three-color chips or multi...
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Abstract

The invention provides a high color rendering white light source structure which comprises a white light epitaxial structure. The white light epitaxial structure is orderly provided with a diamond substrate, a GaBi transition layer, an N-GaN contact layer, a In0.19Ga0.81N/GaN multiple-quantum-well light-emitting layer, a P-GaN contact layer, an N-GaN cascade layer, an N-GaN contact layer, a In0.48Ga0.52N/GaN multiple-quantum-well light-emitting layer, and a P-GaN contact layer from the bottom to top, and an N electrode layer and a P electrode layer are disposed on the layer. According to the invention, the binding of a phosphor is removed, the high color rendering white light source structure has the advantages of good color rendering property, good stability, good luminescence quality, the improvement of working stability and service life, the saving of a part of the packaging process, the allowance of the growth of a white light crystal, the simplification of the production process of a whole industrial chain, the great improvement of production efficiency and the easy realization of industrialized mass production, the structure is formed in one time by self-made glue molding, sothe internal light stress of the white light source structure is low, the warpage deformation is also small, the light effect is improved, the process is optimized, the mechanical performance is stable, the product reliability is high, and the cost is greatly reduced.

Application Domain

Technology Topic

Multiple quantumSource structure +11

Image

  • High color rendering white light source structure and manufacturing method thereof
  • High color rendering white light source structure and manufacturing method thereof
  • High color rendering white light source structure and manufacturing method thereof

Examples

  • Experimental program(1)
  • Effect test(1)

Example Embodiment

[0081] Example one
[0082] Die out the diamond crystal as required. After the 2 inch or 4 inch bar is fixed, sliced, annealed, chamfered, graded inspection, grinding, cleaning, etc., a qualified 2 inch or 4 inch diamond lining is made At the bottom, the thickness of the diamond substrate is 150um.
[0083] Put the diamond substrate on the tray and send it to the K465i MOCVD epitaxial furnace. The GaBi transition layer is grown at 610 degrees Celsius, and the N-GaN contact layer is grown at 1050 degrees Celsius. Next, nitrogen is used as the carrier to grow In at 680 degrees Celsius. 0.19 Ga 0.81 N/GaN (doped zinc, cadmium, silicon, selenium) multiple quantum well light-emitting layer, then grow P-GaN contact layer at 990°C, grow N-GaN cascade layer at 950°C, and grow N at 1050°C -GaN contact layer, growing In at 680 degrees Celsius 0.48 Ga 0.52 N/GaN (doped zinc, cadmium, silicon, selenium) multiple quantum well light-emitting layer, P-GaN contact layer grown at 990 degrees Celsius, epitaxial wafer production is completed.
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PUM

PropertyMeasurementUnit
Thickness45.0 ~ 180.0µm
Thickness9.0 ~ 90.0nm
Thickness180.0 ~ 900.0nm
tensileMPa
Particle sizePa
strength10

Description & Claims & Application Information

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