High color rendering white light source structure and manufacturing method thereof
A white light source and high color rendering technology, which is applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low efficiency of ultraviolet light chips and RGB phosphors, difficulty in meeting low color temperature lighting requirements, and complex drive circuits for chip performance. , to improve the working stability and service life, save part of the packaging process, and achieve the effect of small warping deformation
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[0081] Example one
[0082] Die out the diamond crystal as required. After the 2 inch or 4 inch bar is fixed, sliced, annealed, chamfered, graded inspection, grinding, cleaning, etc., a qualified 2 inch or 4 inch diamond lining is made At the bottom, the thickness of the diamond substrate is 150um.
[0083] Put the diamond substrate on the tray and send it to the K465i MOCVD epitaxial furnace. The GaBi transition layer is grown at 610 degrees Celsius, and the N-GaN contact layer is grown at 1050 degrees Celsius. Next, nitrogen is used as the carrier to grow In at 680 degrees Celsius. 0.19 Ga 0.81 N / GaN (doped zinc, cadmium, silicon, selenium) multiple quantum well light-emitting layer, then grow P-GaN contact layer at 990°C, grow N-GaN cascade layer at 950°C, and grow N at 1050°C -GaN contact layer, growing In at 680 degrees Celsius 0.48 Ga 0.52 N / GaN (doped zinc, cadmium, silicon, selenium) multiple quantum well light-emitting layer, P-GaN contact layer grown at 990 degrees Celsiu...
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