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Preparation method of P-type semiconductor graphene

A graphene and semiconductor technology, applied in the field of preparation of P-type semiconductor graphene, can solve the problems of poor P-type electrical stability, uncontrollable hole concentration, environmental pollution danger, etc., achieve process environmental protection, realize large-scale industrial application, Wide range of effects

Active Publication Date: 2018-12-11
恒力(厦门)石墨烯科技产业集团有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In summary, the existing problems in the prior art are: the P-type semiconductor graphene prepared by the existing method has extremely poor electrical stability, uncontrollable hole concentration, poor doping uniformity, and the preparation process Need to use some chemical reagents, there is a certain risk of environmental pollution

Method used

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  • Preparation method of P-type semiconductor graphene

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preparation example Construction

[0035] see figure 1 , the present invention provides a kind of technical scheme: a kind of preparation method of P-type semiconductor graphene, the steps of the preparation method of P-type semiconductor graphene are as follows:

[0036] S01: Put the cleaned and dried specific substrate on the reaction table, then vacuumize it, and pass in Ar gas protection gas.

[0037] S02: Excite the microwave, adjust the power of the microwave transmitter to the first reaction, and raise the temperature to the first reaction temperature, adjust the pressure of the reaction chamber, and then pass in H 2 and CH 4 , control H 2 and CH 4 The gas flow rate is 0.1-20min, and a part of the graphene film is formed.

[0038] S03: Introduce a mixture of boron source gas and H with a certain volume concentration 2 The mixed gas, adjust the flow rate of the mixed gas, and control the reaction temperature to the second reaction temperature, adjust the microwave emission power to the second reactio...

Embodiment 1

[0056] A kind of preparation method main steps of P-type semiconductor graphene is:

[0057] S01: Put the cleaned and dried specific copper foil on the reaction table, then evacuate to 0.03-1Pa, and pass in Ar gas protection gas, the flow rate of argon gas is 10cm 3 / min.

[0058] S02: Activate the microwave and adjust the microwave transmitter until the power of the first reaction is 2Kw, and raise the temperature to the first reaction temperature of 700°C, adjust the pressure of the reaction chamber to 0.07Pa, and then pass in H 2 and CH 4 , control H 2 and CH 4 The air flow rate is 10cm 3 / min and 10cm 3 / min, H 2 and CH 4 The volume ratio is 1:1, react for 1 min, and form a part of the graphene film.

[0059] S03: Introduce a mixture of octaborane gas and H 2 The mixed gas, the volume ratio is 1:2, the flow rate of the mixed gas is 10cm 3 / min, control the reaction temperature to the second reaction temperature of 800°C, and adjust the microwave emission power to...

Embodiment 2

[0062] A kind of preparation method main steps of P-type semiconductor graphene is:

[0063] S01: Put the cleaned and dried specific nickel foil on the reaction table, then evacuate to 0.03-1Pa, and pass in Ar gas protection gas, the flow rate of argon gas is 20cm 3 / min.

[0064] S02: Activate the microwave and adjust the microwave transmitter until the power of the first reaction is 2Kw, and raise the temperature to the first reaction temperature of 600°C, adjust the pressure of the reaction chamber to 0.05-1Pa, and then pass in H 2 and CH 4 , control H 2 and CH 4 The air flow rate is 10cm 3 / min and 5cm 3 / min, H 2 and CH 4 The volume ratio is 2:1, react for 1 min, and form a part of the graphene film.

[0065] S03: Introduce a mixture of octaborane gas and H 2 The mixed gas, the volume ratio is 3:1, the flow rate of the mixed gas is 20cm 3 / min, control the reaction temperature to the second reaction temperature of 750°C, and adjust the microwave emission power t...

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Abstract

The invention belongs to the field of semiconductor preparation, and discloses a preparation method of P-type semiconductor graphene. The preparation method of the P-type semiconductor graphene uses amicrowave plasma chemical vapor deposition (MPCVD) method to prepare the P-type semiconductor graphene, and comprises the following steps: placing a cleaned and dried specific substrate on a reactiontable surface; sequentially introducing reaction gas and boron source and H2 mixed gas into a reaction chamber, and controlling reaction conditions to obtain boron-doped P-type semiconductor graphene. The preparation method of the P-type semiconductor graphene uses the MPCVD method to prepare the P-type semiconductor graphene, and the boron source is mixed with a part of hydrogen into the reaction chamber, so that the boron source is more evenly distributed in the chamber, and the uniformity of doping on the graphene is more easily controlled. Therefore, the more high-quality P-type semiconductor graphene is obtained, the process is more environmentally friendly, and large-scale industrial applications can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, in particular to a preparation method of P-type semiconductor graphene. Background technique [0002] Graphene is a two-dimensional planar material composed of a single layer of carbon atoms, which has excellent properties in mechanics, heat, electricity, optics and other aspects. Especially in the field of semiconductor applications, because the electron mobility of graphene at room temperature is 15000cm2 / (V·s), the electron mobility is 10 times that of silicon, and the resistivity is also very low, only 10-6Ω·cm. The light transmittance of layered graphene is as high as 97.7%, so it has broad application prospects in the field of semiconductor manufacturing. However, the conduction band and valence band of intrinsic graphene are conical contact at the center of the Brillouin zone, which is a semiconductor or semi-metal with zero band gap, which limits the application and dev...

Claims

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Application Information

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IPC IPC(8): C01B32/186
CPCC01B32/186C01B2204/22
Inventor 陈木成
Owner 恒力(厦门)石墨烯科技产业集团有限公司