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A I-V group co-doped amorphous oxide semiconductor thin film and thin film transistor

An amorphous oxide, thin film transistor technology, applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve problems such as changing properties, and achieve the effect of reducing concentration, good material properties, and high switching current ratio

Inactive Publication Date: 2018-12-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In oxide semiconductors, doping can significantly change the properties of materials and improve the performance of materials. At present, people's research and development are basically ternary or quaternary amorphous oxide semiconductor materials as mentioned above, and few involve doping. Miscellaneous situation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: Li-N co-doped amorphous ZnAlSnO thin film and thin film transistor

[0025] Using magnetron sputtering method to dope Li 2 The ZnAlSnO ceramic sheet of O is used as the target material, and the amorphous ZnAlSnO: (Li, N) thin film is grown at room temperature in an oxidizing atmosphere containing active N as the channel layer. With display glass as the substrate, Al as the gate, source and drain, SiO 2 for the insulating layer. The amorphous ZnAlSnO:(Li,N) thin film transistor is prepared by using the above thin films.

[0026] The amorphous ZnAlSnO:(Li,N) film grown at room temperature was tested for its structure, electrical and optical properties. The test results are: the film is amorphous, with a thickness of 10-100nm; the doping content of Li element is less than 5 at.% , the N element doping content is less than 5 at.%, and the composition distribution is uniform; the band gap at room temperature is 3.3~4.4 eV, and the visible light transmittance is...

Embodiment 2

[0028] Example 2: Na-P co-doped amorphous ZnGaInO thin film and thin film transistor

[0029] Using magnetron sputtering method to dope Na 2 O and P 2 o 5 The ZnGaInO ceramic sheet is used as the target material, and the amorphous ZnGaInO: (Na, P) film is grown at room temperature in an oxidizing atmosphere as the channel layer. With display glass as the substrate, Al as the gate, source and drain, SiO 2 for the insulating layer. The amorphous ZnGaInO:(Na,P) thin film transistor is prepared by using the above thin films.

[0030]The amorphous ZnGaInO:(Na,P) film grown at room temperature was tested for its structure, electrical and optical properties. The test results are: the film is amorphous, with a thickness of 10-100nm; the doping content of Na element is less than 5 at.% , the P element doping content is less than 5 at.%, and the composition distribution is uniform; the band gap at room temperature is 3.4~4.5 eV, and the visible light transmittance is above 92%.

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PUM

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Abstract

The invention discloses an I-A V-group co-doped amorphous oxide semiconductor thin film and a thin film transistor thereof, wherein the chemical formula of the amorphous oxide semiconductor is ZnMO:(I,V) or ZnAMO: (I, V), M is In or Sn, and A is any one of Al, Ga, Zr, Hf, Ti, Mg, Si, Ge, Nb, Be, Ca, Sr, Ba, Sc, Y, V, Ta, Cr, Mo, W, Re, Ni, Cu, Ag or Au; I is a group I doping element Li or Na orK or Rb or Cs, V is a group V doping element N or P or As or Sb or Bi, and the doping content of the group I and V elements is not more than 5 at.%. Produced I-V-group co-doped amorphous oxide semiconductor films have amorphous structure. The band gap is 3.3-4.5 eV at room temperature, the thickness of the films is 10 -100 nm, and the transmittance of visible light is more than 92%. Preferably, the film provided by the invention is an Li-N Co-doped Amorphous ZnAlSnO Thin Films and Na-P co-doped amorphous ZnGaInO thin film and the film transistor adopting the above film as a channel layer has excellent device performance.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to an I-V group co-doped amorphous oxide semiconductor thin film and a thin film transistor. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. Regardless of the active matrix liquid crystal display (AMLCD), which is absolutely dominant in the current advanced display market, or the AMOLED (active matrix organic light-emitting diode display), which represents the future trend of flexible display, TFT devices occupy a large part of the pixel drive unit. key position. In addition, TFT devices have been widely researched and applied in biosensing, ultraviolet search and other fields. Therefore, it is of great significance to research and develop TFT devices. The most important component of TFT is its channel layer material, and the research on TFT also focuses on the r...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L29/786
CPCH01L29/247H01L29/78693
Inventor 吕建国陆波静
Owner ZHEJIANG UNIV
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