A polymorphic non-volatile solid-state memory cell based on a vertical read/write operation

Abstract

A polymorphic non-volatile solid-state memory cell based on a vertical read / write operation includes a bottom electrode layer, a ferroelectric piezoelectric layer formed on the bottom electrode layer,an intermediate electrode layer thereon, a pn junction layer adjacent to the intermediate electrode layer, and a top electrode layer thereon. The ferroelectric piezoelectric layer is used as the information writing layer and the pn junction layer is used as the information storage layer. The ferroelectric piezoelectric layer has a plurality of stress states under the vertical electric field, andthe pn junction layer has a plurality of non-volatile resistance states on the ferroelectric piezoelectric layer, so that the information can be written and erased. A read current or voltage is applied to the pn junction layer in a vertical direction so that information of the memory layer is read vertically. Vertical writing and reading of information and polymorphic features are conducive to greatly improve the storage density; the invention realizes information writing and erasing by utilizing an electric field, which is also conducive to reducing information access power consumption.

Description

technical field [0001] The invention belongs to the technical field of information storage, and in particular relates to multi-state and non-volatile solid-state storage devices, especially the operation of electric field vertical writing and resistance vertical read-out of multi-state and non-volatile solid-state storage components and corresponding information Write and read methods. Background technique [0002] The rapid development of IT technology is inseparable from the progress of information storage technology, and information storage technology has become an important link in the development of modern electronic industry. Realizing high density, low power consumption, non-volatile and high-speed storage at the same time is the goal that people dream of. To this end, people have developed a variety of storage devices, mainly including: optical storage media that use light to read and write, such as CDs and DVDs; magnetic media storage devices that use magnetic fiel...

AI Technical Summary

Problems solved by technology

Although the large-scale application of the giant magnetoresistive head has improved the storage density of the hard disk, the mechanical movement of the head limits the storage speed. In addition, information writing requires a large current to induce a strong magnetic field to complete the magnetic domain flip, which greatly increases the storage capacity of the hard disk. Power consumption for information writing

MRAM based on the magnetic tunnel junction has the advantages of high density, fast writing and reading speed, and non-volatility, and has become one of the best candidates for the next generation of magnetic storage. Migration leads to wire breakage and magnetic interference between adjacent memory cells. Low power consumption and high density MRAM memory needs further research and improvement

Recently, people have designed a spin-torque-based STT-MRAM for the limitation of storage density due to magnetic field interference. Moreover, this type of memory has a temperature dependence, and the temperature rise causes the instability of the storage state, which also severely limits the application of the memory

[0004] Analyzing the above typical storage technologies, it can be found that they either use strong magnetic fields generated by currents to write information, such as: hard disks, MRAMs, or directly use large currents to achieve magnetization through the spin torque effect in ferromagnetic films. Flip, such as: STT-MRAM, or use the voltage to regulate the charge of the storage unit to write and read information, such as: solid-state memory SSD, so these storage technologies consume a lot of power when writing information, and writing Slower, these disadvantages impair their overall storage performance

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