An epitaxial growth method for improving the luminous efficiency of a GaN-based LED chip

Abstract

The invention discloses an epitaxial growth method for improving the luminous efficiency of a GaN-based LED chip, and includes growing an undoped GaN layer, growing a Si-doped n-type GaN layer, growing a lightly Si-doped n-type GaN layer, growing a luminescent layer, growing a low-temperature p-type GaN layer, growing a p-type AlGaN layer, growing a new p-type GaN layer, growing a high-temperaturep-type GaN contact layer, and cooling, wherein growing the new p-type GaN layer sequentially comprises the steps of growing a high-temperature P-type GaN-1 layer, performing NH3 pyrolysis, performingannealing treatment, and growing a high-temperature P-type GaN-2 layer. Through introduction of the new p-type GaN lay, the n-vacancy of a P structure can be reduced, and Mg-H bonds can be reduced, the ionization rate of Mg of the P structure is increased, the hole concentration of the P structure is increased, and the luminous efficiency of the LED chip is improved.

Description

technical field [0001] The invention relates to the technical field of LED epitaxy design and application, and more particularly relates to an epitaxial growth method for improving the luminous efficiency of a GaN-based LED chip. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting, which is recognized by consumers due to its advantages such as small size, low power consumption, long service life, and environmental protection. The LED epitaxial n-structure provides electrons, and the P-structure provides holes. The electrons and holes are driven by constant current voltage to meet in the light-emitting layer to generate electron-hole pair recombination and release photons. At present, the scale of LED production at home and abroad is gradually expanding, and the market demand for LED brightness and light efficiency is increasing day by day, but LED still has the problem of low luminous efficiency, which affects the ...

AI Technical Summary

Problems solved by technology

At present, the scale of LED production at home and abroad is gradually expanding, and the demand for LED brightness and light efficiency in the market is increasing day by day, but LED still has the problem of low luminous efficiency, which affects the energy-saving effect of LED.

[0003] At present, the traditional LEDs on the market are limited by the low ionization rate of the Mg element in the P structure in terms of epitaxy, resulting in a low hole concentration in the P structure. In addition, the P structure has losses during the hole transmission process, and the hole mobility is low. The hole concentration in the light-emitting layer is low, resulting in low luminous efficiency of the LED chip

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