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Amorphous cobalt-nickel-matrix chalcogenide film as well as preparation method and application thereof

A technology of chalcogenides and sulfides, which is applied in the field of solar cells, can solve the problem of less amorphous cobalt-nickel-based chalcogenides, and achieve the effects of low cost, easy availability of raw materials, and reduced production costs

Inactive Publication Date: 2018-12-18
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are few related research reports on amorphous cobalt-nickel-based chalcogenides, and it is worth further exploring their application in DSCs

Method used

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  • Amorphous cobalt-nickel-matrix chalcogenide film as well as preparation method and application thereof
  • Amorphous cobalt-nickel-matrix chalcogenide film as well as preparation method and application thereof
  • Amorphous cobalt-nickel-matrix chalcogenide film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0040] Disperse 0.125 mmol of cobalt chloride hexahydrate, 0.125 mmol of nickel chloride hexahydrate and 50 mmol of thiourea in 50 mL of deionized water and stir evenly to obtain an electroplating solution. Take 1mL of analytically pure ammonia water and add it to 10mL of deionized water to make an ammonia solution. Add 0.13ml of ammonia solution to the electroplating solution to adjust the pH of the electroplating solution to 7.1; use the platinum mesh as the counter electrode, silver / silver chloride as the reference electrode, and ITO conductive glass as the working electrode. The deposition bias is -0.8 V, and the setting time is 10 s; the anode electrodeposition bias is 0.3 V, and the setting time is 20 s; the number of electroplating cycles is 20; the electroplating temperature is 35 °C; Amorphous cobalt-nickel-based sulfide films were obtained.

[0041] For ease of description, the Co-Ni-S film can be expressed as Co-Ni-S-x:y, where x refers to the amount of cobalt chlo...

Embodiment approach 2

[0044] Disperse 0.125 mmol of cobalt chloride hexahydrate, 0.125 mmol of nickel chloride hexahydrate and 50 mmol of thiourea in 50 mL of deionized water and stir evenly to obtain an electroplating solution. Add 0.17ml of ammonia solution to the electroplating solution to adjust the pH of the electroplating solution to 7.3; use the platinum mesh as the counter electrode, silver / silver chloride as the reference electrode, and ITO conductive glass as the working electrode. The deposition bias was -1.3 V, and the setting time was 5 s; the anode electrodeposition bias was 0.1 V, and the setting time was 25 s; the number of electroplating cycles was 5; the electroplating temperature was 10°C; Amorphous cobalt-nickel-based sulfide Co-Ni-S-1:1 film was obtained.

Embodiment approach 3

[0046] Disperse 0.125 mmol of cobalt chloride hexahydrate, 0.125 mmol of nickel chloride hexahydrate and 50 mmol of thiourea in 50 mL of deionized water and stir evenly to obtain an electroplating solution. Add 0.15ml of ammonia solution to the electroplating solution to adjust the pH of the electroplating solution to 7.2; use the platinum mesh as the counter electrode, silver / silver chloride as the reference electrode, and FTO conductive glass as the working electrode. The deposition bias was -1.2 V, and the setting time was 6 s; the anode electrodeposition bias was 0.2 V, and the setting time was 24 s; the number of electroplating cycles was 12; the electroplating temperature was 25°C; Amorphous cobalt-nickel-based sulfide Co-Ni-S-1:1 film was obtained.

[0047] Such as figure 2 , SEM characterization of the Co-Ni-S-1:1 thin film prepared in this embodiment. From the SEM pictures, it can be clearly seen that the Co-Ni-S-1:1 film is composed of nanoparticles and nanoflakes...

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Abstract

The invention relates to the technical field of solar cells, and discloses an amorphous cobalt-nickel-matrix chalcogenide film as well as a preparation method and an application thereof. The amorphouscobalt-nickel-matrix chalcogenide film is prepared from an electroplating solution which is prepared from double metal sources, a sulfur group source and an additive through an electrochemical deposition method, wherein the double metal sources are cobalt chloride hexahydrate and nickel chloride hexahydrate; if amorphous cobalt-nickel-matrix chalcogenide is amorphous cobalt-nickel-matrix sulfide,the sulfur group source is thiourea, the additive is an ammonia water solution, and the electrochemical deposition method is a reverse constant-voltage electro-deposition technology; and if the amorphous cobalt-nickel-matrix chalcogenide is amorphous cobalt-nickel-matrix selenide, the sulfur group source is selenium dioxide, the additive is potassium chloride, the molar ratio of cobalt ions to nickel ions in the electroplating solution is 1: 1 to 2: 3, and the electrochemical deposition method is a constant-voltage electro-deposition technology. The amorphous cobalt-nickel-matrix chalcogenidefilm prepared by the method is excellent in electro-catalytic property, and high in electroconductivity and stability.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an amorphous cobalt-nickel-based chalcogenide thin film and its preparation method and application. Background technique [0002] Dye-sensitized solar cells (DSCs) have shown potential applications in portable electronics due to their low cost, simple process, and environmental friendliness. Aiming at key issues such as the lack of resources of traditional platinum electrodes and the need to improve the electrocatalytic performance of transition metal chalcogenide counter electrodes, the research team intends to design and construct DSCs with excellent photoelectric performance by using cobalt-nickel-based chalcogenide counter electrodes as the research object. Among the various preparation methods of transition metal chalcogenides, the electrochemical deposition method presents the advantages of low cost, simple operation, short preparation time, and environmental friendline...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04H01G9/20
CPCC25D9/04H01G9/2022Y02E10/542
Inventor 蒋青松陈俊文杨潇张宇林季仁东于银山杨子莹
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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