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A kind of peald low-temperature preparation method of ferroelectric thin film and ferroelectric thin film

A ferroelectric thin film and low temperature technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems that it is difficult to further improve the quality of the film, it is difficult to control the quality of the film, and affect the accuracy of the thickness of the film, so as to achieve the improvement Compatibility with silicon, speed up development and application, and keep the effect for a long time

Active Publication Date: 2020-02-07
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current prior art, the common ferroelectric thin film preparation methods mainly include: 1) sol-gel method (sol-gel), the cost of this method is relatively low, but the doping can only be controlled at the molecular level during the preparation process. , which affects the thickness accuracy of the film, so it is difficult to control the quality of the film; 2) PLD method, that is, pulsed laser deposition method, which has independently adjustable growth parameters and can accurately control the stoichiometric ratio, and is easy to realize the growth of ultra-thin films and multilayer films. The preparation of the grown thin film has good crystallization performance, high flatness of the film, and can be grown in batches
However, it is difficult to further improve the quality of the film due to the deposition of particles, gaseous atoms and molecules in the plasma tube on the film will reduce the quality of the film

Method used

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  • A kind of peald low-temperature preparation method of ferroelectric thin film and ferroelectric thin film
  • A kind of peald low-temperature preparation method of ferroelectric thin film and ferroelectric thin film
  • A kind of peald low-temperature preparation method of ferroelectric thin film and ferroelectric thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Select Hf(NC 2 h 5 CH 3 ) 4 Hafnium source precursor, La(iprcp) 3 is the precursor of lanthanum source, O 2 It is an oxygen source precursor; Ar is used as a carrier gas. The method for preparing lanthanum-doped hafnium oxide-based ferroelectric film at low temperature by PEALD method comprises the following steps:

[0079] Si substrate selection and substrate surface cleaning: select p-type medium-resistance Si (100) as the substrate material, and use the RCA method to clean the Si substrate surface, which specifically includes putting the silicon wafer into the SPM solution with a temperature of 120 °C ( h 2 o 2 :NH 4 OH:H 2 SO 4 =5:5:20) for 10 minutes to remove organic pollutants and metal ions, rinse the silicon wafer with deionized water; then put the silicon wafer into sc-2 solution (H 2 o 2:HCl:H 2 (0=5:5:25) for 10 min, remove metal ions, and rinse the silicon wafer with deionized water; then soak the silicon wafer with HF for 30 seconds to remove ...

Embodiment 2

[0085] Tetra-tert-butyl hafnium (HTB, with a purity of 99.9%) was selected as the hafnium source precursor, tetra-tert-butyl zirconium (ZTB, with a purity of 99%) was used as the zirconium source precursor, and O 2 It is an oxygen source precursor, and the carrier gas is Ar; the method for preparing zirconium (Zr) doped ferroelectric film at low temperature by PEALD method comprises the following steps:

[0086] Si substrate selection and substrate surface cleaning: select p-type medium-resistance Si (100) as the substrate material, and use the RCA method to clean the Si substrate surface, which specifically includes putting the silicon wafer into the SPM solution with a temperature of 120 °C ( h 2 o 2 :NH 4 OH:H 2 SO 4 =5:5:20) for 8 minutes to remove organic pollutants and metal ions, rinse the silicon wafer with deionized water; then put the silicon wafer into sc-2 solution (H 2 o 2 :HCl:H 2 (0=5:5:25) for 9 minutes, remove metal ions, and rinse the silicon wafer wit...

Embodiment 3

[0092] Use metal alkyl tetraethyl lead Pb(Et) 4 , is the metal lead source precursor, Ti(OiPr) 4 It is the metal titanium source precursor, Zrcl 4 It is the precursor of zirconium source, and the precursor of oxygen is H 2 O, carrier gas is Ar gas; Adopt the method for preparing PZT ferroelectric film at low temperature of PEALD method, comprise the following steps:

[0093] Si substrate selection and substrate surface cleaning: select p-type medium-resistance Si (100) as the substrate material, and use the RCA method to clean the Si substrate surface, which specifically includes putting the silicon wafer into the SPM solution with a temperature of 120 °C ( h 2 o 2 :NH 4 OH:H 2 SO 4 =5:5:20) for 15 minutes to remove organic pollutants and metal ions, rinse the silicon wafer with deionized water; then put the silicon wafer into sc-2 solution (H 2 o 2 :HCl:H 2 (0=5:5:25) for 12 minutes, remove metal ions, and rinse the silicon wafer with deionized water; then soak the ...

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Abstract

The invention discloses a method for preparing a ferroelectric film, and belongs to the technical field of ferroelectric film preparation. The method comprises the following steps: S1, preparing a substrate with a substrate material; and S2, processing the substrate by adopting a plasma enhanced atomic layer deposition method in a first preset temperature range to obtain a ferroelectric film witha predetermined thickness. The ferroelectric film prepared by the method is high in compatibility with a silicon substrate material in the preparation process, and the ferroelectric film prepared by the method has the characteristics of being high in spontaneous polarization, large in residual polarization value, high in fatigue resistance, long in holding time and the like.

Description

technical field [0001] The application belongs to the technical field of ferroelectric thin film preparation, and specifically relates to a method for preparing ferroelectric thin film by PEALD at low temperature and the ferroelectric thin film. Background technique [0002] Introduction to existing technology [0003] Ferroelectric thin films of traditional materials (such as PZT, BTO, etc.) have been studied for many years in the field of ferroelectric thin film preparation and device preparation technology related to ferroelectric thin films, and the development is relatively mature, and its related technologies are also relatively mature. For example, ferroelectric access devices made of traditional ferroelectric thin films are mostly used in existing technologies. This technology is applied to commercial manufacturing and is widely used in military and aerospace industries. However, traditional ferroelectric materials also have problems such as large environmental poll...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/50C23C16/40
CPCC23C16/40C23C16/45536
Inventor 廖敏游朋先郑帅至彭强祥尹路周益春
Owner XIANGTAN UNIV