Method for epitaxial growth of aluminum nitride on nano imaging sapphire substrate
A sapphire substrate and nano-pattern technology, applied in the field of materials, can solve the problems of lattice mismatch thermal mismatch, difficulty in obtaining a flat aluminum nitride film, poor quality of the aluminum nitride film, etc., and reduce high stress and high dislocation. Density, improved quality, high universality
Inactive Publication Date: 2019-01-01
BEIJING GRAPHENE INST +1
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Problems solved by technology
[0003] Aluminum nitride film is the core basic material of ultraviolet LED, but there is a huge lattice mismatch and thermal mismatch between aluminum nitride and nano-patterned sapphire epitaxial substrate, resulting in poor quality of epitaxially grown aluminum nitride film
Moreover, the migration rate of aluminum atoms and nitrogen atoms on a patterned substrate is much lower than that of a flat sapphire substrate. It is difficult to obtain a flat aluminum nitride film by changing the pressure, air flow, etc.
Method used
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Embodiment 1
[0035] Example 1 An aluminum nitride thin film is epitaxially grown on a graphene nano-patterned sapphire substrate.
[0036] 1) Depositing a graphene layer on the surface of a nano-patterned sapphire substrate.
[0037] Place the nano-patterned sapphire substrate in the reaction chamber, raise the temperature to 1100°C under 300 sccm oxygen atmosphere, and anneal pretreatment under this condition for 4 hours, then turn off the oxygen, use argon to exhaust the oxygen in the system, and keep the flow rate at 500sccm, 200sccm hydrogen and 15sccm methane were introduced to carry out the chemical vapor deposition reaction of graphene, and the reaction time was 8h, so that the graphene layer was deposited on the nano-patterned sapphire substrate.
[0038] 2) Nitrogen plasma treatment is performed on the graphene nanopatterned sapphire substrate.
[0039] Put the graphene nano-patterned sapphire substrate into the plasma processing chamber, adjust the nitrogen flow rate to 15 sccm,...
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Abstract
The present invention provides a method for epitaxial growth of aluminum nitride on nano imaging sapphire substrate. The method comprises the steps of: depositing a graphene layer at the surface of the nano imaging sapphire substrate; performing plasma processing for the graphene layer; and performing epitaxial growth of an aluminum nitride layer after processing. The aluminum nitride on nano imaging sapphire substrate is taken as the substrate of epitaxial growth of aluminum nitride to perform plasma processing for the graphene layer, the grapheme is taken as a buffer layer, and the Van der Waal epitaxial property is employed to reduce the high stress and the high dislocation density caused by lattice mismatch and thermal mismatch so as to effectively improve the quality of the epitaxialaluminum nitride film.
Description
technical field [0001] The invention relates to the field of materials, in particular to a method for epitaxially growing aluminum nitride on a nano-patterned sapphire substrate. Background technique [0002] Aluminum nitride (AlN) is a Ⅲ-Ⅴ semiconductor with a wide direct band gap. It has high thermal conductivity, high mechanical strength, high chemical stability and strong radiation resistance. It is used in optoelectronics, high-temperature high-power devices and The application of high-frequency broadband communication devices has broad prospects. Nanopatterned sapphire substrate is a new type of nitride epitaxial substrate that can improve light extraction efficiency. [0003] Aluminum nitride film is the core basic material of ultraviolet LED, but there is a huge lattice mismatch and thermal mismatch between aluminum nitride and nano-patterned sapphire epitaxial substrate, resulting in poor quality of epitaxially grown aluminum nitride film. Moreover, the migration ...
Claims
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IPC IPC(8): H01L21/02H01L33/32
CPCH01L21/0254H01L21/02658H01L33/32
Inventor 刘忠范陈召龙高鹏
Owner BEIJING GRAPHENE INST