Unlock instant, AI-driven research and patent intelligence for your innovation.

Infrared cut film and production method thereof

An infrared cut-off film and product technology, applied in the optical field, can solve problems such as complex structure, single product structure, poor long-term use stability, etc., achieve long product life, solve function failure, reduce processing difficulty and production cost.

Active Publication Date: 2021-07-27
布勒莱宝光学设备(北京)有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The technical solution of the present invention can effectively solve the defects of existing products such as complex use structure, single product structure and poor long-term use stability, and can significantly reduce the processing difficulty and production cost of downstream factories, thereby improving production capacity and yield rate, and making product application occasions more efficient. Broader, more flexible, and ultimately better pervasive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared cut film and production method thereof
  • Infrared cut film and production method thereof
  • Infrared cut film and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] The invention provides a preparation method of an infrared cut-off film, comprising the following steps:

[0031] S1: Use the magnetron sputtering method to coat the infrared cut-off film on the substrate, and control the vacuum degree of the magnetron sputtering body to - 6 mbar; and when the types of coating materials are greater than or equal to two, the isolation coefficient of two adjacent different process atmospheres is >20. Wherein, the infrared cut-off film includes a functional layer, a dielectric layer and a protective layer; wherein, the functional layer is selected from a transparent conductive oxide film material, and is preferably zinc aluminum oxide and / or indium tin oxide; the substrate is selected from a glass substrate.

[0032] S2: Tempering the coated base material to finally obtain an infrared cut-off film.

[0033] The following will be described in conjunction with specific embodiments.

Embodiment 1

[0035] This embodiment provides a method for preparing an infrared cut-off film with zinc-aluminum oxide as a functional layer, comprising the following steps:

[0036] S101: Use the magnetron sputtering method to sequentially plate a silicon nitride layer, a nickel-chromium layer, a zinc-aluminum oxide layer, a nickel-chromium layer, a silicon nitride layer and a titanium oxide layer on the substrate, and control the bulk vacuum of the magnetron sputtering degree-6mbar; and when the types of coating materials are greater than or equal to two, the isolation coefficient of two adjacent different process atmospheres is >20; glass substrate, silicon nitride layer, nickel-chromium layer, zinc-aluminum oxide layer, nickel-chromium layer, nitrogen The thickness ratio of silicon oxide layer and titanium oxide layer is 6mm: (60-70) nm: (4-5) nm: (370-400) nm: (4-5) nm: (150-180) nm: (28~35)nm.

[0037] Among them, when the silicon nitride layer is plated, the working atmosphere of th...

Embodiment 2

[0043] This embodiment provides a method for preparing an infrared cut-off film with indium tin oxide as a functional layer, comprising the following steps:

[0044] S101: Use the magnetron sputtering method to sequentially plate a silicon nitride layer, a nickel-chromium layer, a zinc-aluminum oxide layer, a nickel-chromium layer, a silicon nitride layer and a titanium oxide layer on the substrate, and control the bulk vacuum of the magnetron sputtering degree-6 mbar; and when the type of coating material is greater than or equal to two, the isolation coefficient of two adjacent different process atmospheres is >20; glass substrate, silicon nitride layer, silicon oxide layer, indium tin oxide layer, silicon oxide layer and nitrogen The thickness ratio of the SiO layer is 6 mm: (40-60) nm: (30-50) nm: (130-150) nm: (30-50) nm: (40-60) nm.

[0045] Among them, when the silicon nitride layer is plated, the working atmosphere of the sputtering cathode is 4~5×10 -3 mbar, the proc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an infrared cut-off film and a production method thereof. Including the following steps: S1: Coating an infrared cut-off film on the substrate by magnetron sputtering, controlling the vacuum degree of the magnetron sputtering body to <8×10 ‑6 mbar; and when the types of coating materials are greater than or equal to two, the isolation coefficient of two adjacent different process atmospheres is >20; the infrared cut-off film includes a functional layer, a dielectric layer and a protective layer; among them, the functional layer is made of transparent conductive oxide film material ; The base material is made of glass base material. S2: Tempering the coated base material to finally obtain an infrared cut-off film. The technical solution of the present invention can effectively solve the defects of existing products such as complex use structure, single product structure and poor long-term use stability, and can significantly reduce the processing difficulty and production cost of downstream factories, thereby improving production capacity and yield rate, and making product application occasions more efficient. Broader, more flexible, and ultimately better pervasive.

Description

technical field [0001] The invention relates to the field of optical technology, in particular to an infrared cut-off film and a production method thereof. Background technique [0002] In recent years, with the rapid development of science and technology, the application fields of infrared cut film products are becoming more and more extensive, such as exterior curtain walls or doors and windows of buildings, glass doors on microwave ovens or refrigerators, glass windows on automobiles, high-speed rails or airplanes, etc. Traditional products of this type mainly use metal materials as the functional layer of the entire product, especially silver materials are the most common, the specific film structure see figure 1 , and some metal materials have good infrared reflection ability, which can block the infrared rays from the outside world to pass through the product. See the typical spectrum figure 2 . When the thickness of the metal film is thin enough and the dielectric ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/36C03C17/34
CPCC03C17/3435C03C17/36C03C17/3613C03C17/3639C03C17/3649C03C17/3655C03C17/3657C03C2217/944C03C2217/948C03C2218/156
Inventor 龙家勇徐佳霖
Owner 布勒莱宝光学设备(北京)有限公司