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Thermal conductive and photosensitive resin

A technology of photosensitive resin and photosensitivity, which is applied in the direction of optics, optomechanical equipment, coating, etc., and can solve the problems of reduced photosensitivity of thermally conductive photosensitive resins

Inactive Publication Date: 2019-01-15
MICROCOSM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to solve the problem of the photosensitivity reduction of the above-mentioned thermally conductive photosensitive resin, and to provide a thermally conductive photosensitive resin with high thermal conductivity and good photosensitivity

Method used

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  • Thermal conductive and photosensitive resin
  • Thermal conductive and photosensitive resin
  • Thermal conductive and photosensitive resin

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045]Take a 500ml three-neck round bottom flask equipped with a mechanical stirrer and a nitrogen inlet, add 19.88g (80 mmol) of 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyl 1,3-Bis(3-aminopropyl)tetramethyldisiloxane), 80.7g of N-methylpyrrolidone (1-Methyl-2-pyrrolidone; NMP), 39.68g (160 mmol) of bicyclo[ 2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride (Bicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride) After reacting the above solution at 50-80°C for 2 hours, add 45g of xylene, heat up to 180°C and continue stirring for 1.5 hours, then add 21.14g (80 mmol) of 3,5-diaminobenzoic acid 2-( 2-(Methacryloyloxy) ethyl ester (2-(Methacryloyloxy) ethyl 3,5-diaminobenzoate), react the above solution at 50-80°C for 2 hours, add 50g of xylene and heat up to 180°C Stirring was continued for 4 hours. PIA-1 solution can be obtained after cooling. Take 50g of PIA-1 solution, add 11.38g of glycidyl methacrylate (Glycidyl methacrylate; GMA) and stir at 70-100°C for 24 hours...

Embodiment 2

[0050] Add 12.5g of filler 1μm boron nitride (BoronNitride) to the PSPI-1 solution in Example 1, and then add 25g of 20% silicon dioxide solution (particle size is 10-15nm) and mix evenly to obtain thermally conductive photosensitive Resin PSPI-BN2. Use a wire bar to coat PSPI-BN2 on the substrate, and after 8 minutes of pre-baking in an oven at 90°C, a film with a film thickness of about 15 μm can be obtained, and an exposure machine (power 7kw) is used to inject about 400mJ / cm 2 The energy is exposed, and then developed with 1wt% (weight percent) sodium carbonate (Sodium carbonate) developer, and the developing time is 1 minute. Then carry out a hard-baking procedure in a nitrogen oven at 200° C. for 2 hours to obtain a heat-resistant development pattern.

Embodiment 3

[0052] Add 16.07g of filler 1μm boron nitride (Boron Nitride) to the PSPI-1 solution in Example 1, and then add 26.78g of 20% silicon dioxide solution (particle size is 10-15nm) and mix evenly to obtain a thermally conductive Photosensitive resin PSPI-BN3. Use a wire bar to coat PSPI-BN3 on the substrate, and after 8 minutes of pre-baking in an oven at 90°C, a film with a film thickness of about 15 μm can be obtained, and an exposure machine (power 7kw) is used to inject about 400mJ / cm 2 The energy is exposed, and then developed with 1wt% (weight percent) sodium carbonate (Sodium carbonate) developer, and the developing time is 1 minute. Then carry out a hard-baking procedure in a nitrogen oven at 200° C. for 2 hours to obtain a heat-resistant development pattern.

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Abstract

The invention provides a thermally conductive type photosensitive resin. The resin comprises (a) a photosensitive polyimide, (b) an inorganic filler, and (c) a silica solution. The photosensitive polyimide accounts for 50 to 80% of a total weight of a solid composition of the thermally conductive type photosensitive resin. The inorganic filler is selected from at least one of aluminium oxide, graphene, inorganic clay, mica powder, boron nitride, aluminium nitride, silica, zinc oxide, zirconium oxide, carbon nanotube and carbon nanofiber, accounts for 20-50% of the total weight of the solid composition of the thermally conductive type photosensitive resin, and has a particle size between 40 nm and 5[mu]m. The silica solution comprises silica particles polymerized by a sol-gel process. The silica particles have a particle size between 10 nm and 15 nm, and account for 5 to 30% of the total weight of the solid composition of the thermally conductive type photosensitive resin. The thermallyconductive type photosensitive resin has a thermal conductivity between 0.4 and 2.

Description

technical field [0001] The invention discloses a thermally conductive photosensitive resin, in particular to a thermally conductive photosensitive resin mainly composed of photosensitive polyimide. Background technique [0002] Generally speaking, polyimide resin is prepared by polycondensation of aromatic tetracarboxylic acid or its derivatives with aromatic diamine and aromatic diisocyanate. The prepared polyimide resin has excellent heat resistance and chemical resistance. It is widely used in insulating and heat-resistant electronic materials such as semiconductor encapsulants because of its high performance, mechanical and electrical properties. [0003] When polyimide is used in the manufacturing process of semiconductor components, it is often necessary to use microlithography (MicroLithography) to make circuit patterns. If traditional polyimide is used, an additional layer of photoresist (photoresist) must be added to etch. Therefore, photosensitive polyimide (PSPI...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075
CPCG03F7/075C08K2003/282C08K2003/385C08K2201/005C08K2201/011C09D179/08G03F7/0047G03F7/0757C09D183/10C08G77/455G03F7/0387C08L79/08C08L63/00C08K3/36C08K3/38C08K3/28C08L83/10C08L67/02C08K5/13C08K5/0025
Inventor 黄堂杰庄维仲
Owner MICROCOSM TECH