Method for fabricating semiconductor laser using impurity induced hybrid technology
A technology for semiconductors and lasers, applied in the field of manufacturing semiconductor lasers using impurity-induced hybridization technology, can solve the problems of unfavorable mass production, high production cost, and complicated process, and achieve the effects of mass production, low cost, and simple process
Active Publication Date: 2020-08-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
[0005] Therefore, in many schemes for preparing semiconductor lasers, there are still the following technical problems to be solved urgently: complex process, low repeatability, long time-consuming, high production cost, unfavorable for mass production, etc.
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[0043] This disclosure uses impurity-induced hybridization technology to manufacture semiconductor lasers, adding copper and dielectric film growth, and performing rapid thermal annealing at high temperatures, without the need for secondary epitaxy, vacuum cleavage coating cavity surface passivation, vulcanization treatment and other technologies , the blue shift effect with considerable blue shift amount can be obtained, the process is simple, the repeatability is high, the time consumption is short, the cost is low, and it is beneficial to mass production.
[0044] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0045] Quantum well hybridization means that after epitaxial growth, some dielectric films that can promote and inhibit blue shift are selectively grown on the e...
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Abstract
The invention discloses a method for manufacturing a semiconductor laser by using an impurity-induced hybrid technology, which comprises the following steps of: preparing an epitaxial wafer; Etching acurrent injection region and a non-current injection region on the epitaxial wafer; A window region at the front cavity surface is photolithographically etched in the current injection region. A layof copper is deposite on that window region at the front cavity surface as a metal film for promoting the blue shift; Growing a first mask layer over the copper in the current injection region, growing a second mask layer over the non-current injection region, and performing annealing treatment to realize quantum well hybridization in the window region at the front cavity surface; Etching off thefirst mask layer by photolithography and retaining the second mask layer to provide current limiting action; And sequentially fabricating a P-plane electrode and an N-plane electrode to complete the fabrication of the semiconductor laser. The method has the advantages of low annealing temperature, effective use of mask to prevent arsenic and other V-group elements from overflowing, high crystal quality of the annealed epitaxial wafer, simple process, high repeatability, short time consumption and low cost, and is favorable for mass production.
Description
technical field [0001] The disclosure belongs to the field of semiconductor optoelectronic devices, and relates to a method for manufacturing a semiconductor laser using impurity-induced hybrid technology. Background technique [0002] Due to the characteristics of high conversion efficiency, small size, light weight, long life, high reliability, direct modulation, and easy integration with other semiconductor devices, semiconductor lasers are widely used in military, industrial processing, precision measurement, laser medical, optical communication, optical Storage and laser printing have been widely and far-reaching applications. [0003] During the performance test and actual use of semiconductor lasers, it was found that the main factors that limit the further increase of its power are thermal saturation and optical catastrophic damage (COD, Catastrophic Optical Degradation) at the cavity surface. With the improvement of new materials such as high thermal conductivity s...
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IPC IPC(8): H01S5/34
CPCH01S5/34
Inventor 侯继达熊聪刘素平马骁宇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI