Method for preparing silicon carbide whisker direct-doping and in-situ growth cooperated toughened high-temperature resistant adhesive
A silicon carbide whisker and high-temperature-resistant glue technology, which is applied in the field of silicon carbide whisker direct mixing and in-situ growth synergistically toughened high-temperature-resistant glue, can solve problems such as application limitations, and achieve improved thermal cycle resistance and fracture resistance Toughness improvement, effect of bond strength and toughness improvement
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Embodiment 1
[0038] The method for preparing silicon carbide whisker direct doping and in-situ growth synergistically toughened high-temperature-resistant glue provided in this example includes the following steps in order:
[0039] (1) Iron powder and copper powder are mixed with a mass ratio of 1:1, then put into a ball mill tank, and ball milled at a speed of 1800r / min for 1 hour to make a mixture 1, which is stored for later use;
[0040] (2) Mix carbon black powder and silicon powder at a molar ratio of 2:1 to make mixture 2, then put it into a ball mill jar, and then add the above-mentioned mixture 1. The mass fraction of the total amount is 7%, and then ball milled at a speed of 3000r / min for 2h, fully mixed evenly to make a mixture 3;
[0041] (3) Mix silicon powder, silicon dioxide powder and boron carbide powder at a mass ratio of 9.5:5:4 to make mixture 4, then put it into a ball mill jar, then add the above mixture 1, mixture 1 The mass fraction of the added amount accounting ...
Embodiment 2
[0049] The method for preparing silicon carbide whisker direct doping and in-situ growth synergistically toughened high-temperature-resistant glue provided in this example includes the following steps in order:
[0050] (1) Iron powder and copper powder are mixed with a mass ratio of 1:0.8, then put into a ball mill tank, and ball milled at a speed of 1500r / min for 2h to make a mixture 1, which is stored for later use;
[0051] (2) Mix carbon black powder and silicon powder at a molar ratio of 1:1 to make mixture 2, then put it into a ball mill jar, and then add the above-mentioned mixture 1, and the amount of mixture 1 accounts for 2 The mass fraction of the total amount is 3%, and then ball milled at a speed of 2000r / min for 1 hour, and mixed thoroughly to form a mixture 3;
[0052] (3) Mix silicon powder, silicon dioxide powder and boron carbide powder with a mass ratio of 9.2:4.8:3.7 to make mixture 4, then put it into a ball mill jar, then add the above mixture 1, mixture...
Embodiment 3
[0060] The method for preparing silicon carbide whisker direct doping and in-situ growth synergistically toughened high-temperature-resistant glue provided in this example includes the following steps in order:
[0061] (1) Iron powder and copper powder are mixed with a mass ratio of 1:1.2, then put into a ball mill jar, and ball milled for 1 hour at a speed of 2000r / min to make a mixture 1, which is stored for later use;
[0062] (2) Mix carbon black powder and silicon powder at a molar ratio of 1.5:1 to make mixture 2, then put it into a ball mill jar, then add the above-mentioned mixture 1, and the amount of mixture 1 accounts for the amount of mixture 2 The mass fraction of the total amount is 5%, and then ball milled at a speed of 2500r / min for 2 hours, and fully mixed evenly to make a mixture 3;
[0063] (3) Mix silicon powder, silicon dioxide powder and boron carbide powder with a mass ratio of 9.7:5.2:4.2 to make mixture 4, then put it into a ball mill jar, then add th...
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