Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Smelting equipment for ingots

A smelting equipment and ingot casting technology, applied in the field of ingot smelting equipment, can solve the problems of scrap ingot material, many defects, sputtering target defects, etc., and achieve the effects of reducing residual gas, reducing solubility and simple process

Inactive Publication Date: 2019-01-18
NINGBO WEITECH VACUUM TECH CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The ingots obtained by the existing equipment often have many defects, which may easily lead to the scrapping of the ingot material or the defects inside the sputtering target

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Smelting equipment for ingots
  • Smelting equipment for ingots
  • Smelting equipment for ingots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] It can be seen from the background art that the ingots obtained by existing equipment often have the problem of many defects. Now combined with a kind of ingot smelting equipment to analyze the reasons for its defects:

[0038] Vacuum induction melting furnace (Vacuum Induction Melter) is a vacuum smelting complete set of equipment that uses the principle of medium frequency induction heating to melt metal under vacuum conditions. This equipment can be used to extract high-purity metals and alloys.

[0039] The existing vacuum induction melting furnace generally includes an induction coil, a graphite crucible and a graphite mold. The graphite mold is set on the base in the vacuum induction furnace. The copper raw material is heated and melted in the graphite crucible to form molten metal; the molten metal is poured into the graphite mold to be cooled to form an ingot.

[0040] refer to figure 1 , shows a schematic cross-sectional structure of an ingot obtained by a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention relates to smelting equipment for ingots. The smelting equipment comprises a casting mold and a vibrating device, wherein the casting mold is located in a chamber of the smelting equipment and used for holding molten metal; the vibrating device is connected to the casing mold and used for vibrating the molten metal in the casting mold. The vibrating device can vibrate the molten metal in the casting mold so as to stir the molten metal and form convection in the molten metal. Formation of air holes and shrinkage holes can be effectively reduced by stirring and convection of the molten metal, defects of the formed ingots can be effectively reduced, the scrap probability of the ingots is reduced, and accordingly, the utilization rate of ingot materials is increased. Defects of aformed sputtering target are reduced, and quality of the formed sputtering target is improved.

Description

technical field [0001] The invention relates to the field of metal smelting, in particular to ingot smelting equipment. Background technique [0002] Sputtering target is an extremely important key material necessary for the manufacture of semiconductor chips. The process principle of using a sputtering target to form a film layer is to use accelerated ions to bombard the target, so that the atoms of the target are sputtered out, deposited on the substrate in the form of a thin film, and finally form the film layer in the semiconductor chip. The film layer formed by using the sputtering target has many advantages such as high uniformity and strong controllability, and is applied in the formation methods of various semiconductor devices. [0003] In the semiconductor process where the film is formed by the sputtering process, the quality of the sputtering target will directly affect the quality of the formed film; and the ingot for the metal target is the raw material for th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22D27/08
CPCB22D27/08C23C14/3414
Inventor 易骛文姚力军潘杰
Owner NINGBO WEITECH VACUUM TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products