A packaging process for LED flip chip

A flip-chip and packaging technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as the impact of LED chip performance, and achieve the effect of improving photoelectric conversion efficiency, good curing effect, and reducing production costs.

Active Publication Date: 2020-12-01
DONGGUAN SINOWIN OPTO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after coating the fluorescent glue, the curing conditions will have a certain impact on the performance of the LED chip

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A packaging process for LED flip chips, comprising the steps of:

[0040] (1) Metal bumps for flip-chip bonding are respectively provided on the N electrode and the P electrode of the LED flip chip;

[0041] (2) A chip substrate is provided, and metal bosses for connecting the positive and negative electrodes of the external circuit are arranged on the chip substrate;

[0042] (3) The metal bumps on the N electrode and the metal bumps on the N electrode are respectively connected to the corresponding metal bumps on the substrate for eutectic connection;

[0043] (4) Cover and solidify the LED flip chip on the chip substrate with fluorescent glue to obtain a packaged LED flip chip;

[0044] In the step (4), the curing adopts three-stage curing, the first-stage curing: the curing temperature is 140° C., 6 minutes; the second-stage curing: the curing temperature is 120° C., 3 hours; the third-stage curing: 100° C., 60 minutes.

[0045] In the step (4), the fluorescent gl...

Embodiment 2

[0063] The difference between this embodiment and the above-mentioned embodiment 1 is: in the step (4), the curing adopts three-stage curing, the first-stage curing: the curing temperature is 145°C, 5.5min; the second-stage curing: the curing temperature is 125°C , 2.5h; Tertiary curing 105 ℃, 55min.

[0064] In the step (4), the fluorescent glue is composed of 78 parts by weight of silica gel, 18 parts by weight of fluorescent powder, 0.8 parts by weight of a diffusing agent and 0.9 parts by weight of a coupling agent.

[0065] The phosphor is made of (BaCaMg) 10 (PO 4 ) 6 Cl 2 :Eu 2 +Phosphor powder, CeMgAl 11 o 19 : Ce 3 +,Tb 3 +Phosphor and (SrMg) 3 (PO 4 ) 2 : A mixture of Sn phosphors in a weight ratio of 5:1.2:1.

[0066] The diffusing agent is a mixture of perovskite quantum dots, nano silicon dioxide and nano barium sulfate in a weight ratio of 2.5:0.8:1.

[0067] The coupling agent is a mixture of vinyltriethoxysilane, vinyltrimethoxysilane and vinyltris...

Embodiment 3

[0071] The difference between this embodiment and the above-mentioned embodiment 1 is that: in the step (4), the curing adopts three-stage curing, the first-stage curing: the curing temperature is 150°C, 5min; the second-stage curing: the curing temperature is 130°C, 2h; tertiary curing 110°C, 50min.

[0072] In the step (4), the fluorescent glue is composed of 80 parts by weight of silica gel, 20 parts by weight of fluorescent powder, 1 part by weight of a diffusing agent and 1 part by weight of a coupling agent.

[0073] The phosphor is made of (BaCaMg) 10 (PO 4 ) 6 Cl 2 :Eu 2 +Phosphor powder, CeMgAl 11 o 19 : Ce 3 +,Tb 3 +Phosphor and (SrMg) 3 (PO 4 ) 2 : A mixture of Sn phosphors in a weight ratio of 3:1.5:1.

[0074] The diffusing agent is a mixture of perovskite quantum dots, nano silicon dioxide and nano barium sulfate in a weight ratio of 2-4:0.5-1.5:1.

[0075] The coupling agent is a mixture of vinyltriethoxysilane, vinyltrimethoxysilane and vinyltris(β...

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Abstract

The invention relates to the field of semiconductor technology, in particular to a packaging process of an LED flip chip, comprising the following steps: (1) arranging metal bumps for flip-chip bonding arranged on an N electrode and a P electrode of the LED flip chip; (2) providing a chip substrate on which metal bosses for connecting positive and negative electrodes of external circuits are provided; (3) eutectic- connecting the metal bump on the N electrode and the metal bump on the N electrode with the corresponding metal boss on the substrate respectively; (4) wrapping and solidifying theLED flip chip on the chip substrate with fluorescent glue to obtain the packaged LED flip chip; In the step (4), the curing adopts three-stage curing. The packaging process of the invention adopts three-stage curing, has good curing effect, does not affect the light emitting efficiency of the LED flip chip, and the cured colloid surface has higher hardness and strength, and is wear-resistant and impact-resistant.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED flip-chip packaging process. Background technique [0002] LED is a solid-state semiconductor device that converts electrical energy into visible light. In order for LEDs to eventually be used in daily life, LEDs need to be packaged. For different LED chip structures, there are different packaging methods, and flip-chip LED packaging has its own specific packaging scheme. [0003] At present, the packaging of flip-chip LEDs includes components such as LED chips, substrates, interconnect materials, and glue. In the process of flip-chip LED packaging, the process used is to use fluorescent glue or rubber cakes to press the entire piece on the arranged On the surface of the chip, after the glue is cured, use a cutting machine to cut the product to realize a single CSP product. However, after the fluorescent glue is coated, the curing conditions will have a certain i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/50H01L33/52H01L33/60
CPCH01L33/504H01L33/52H01L33/60H01L2933/0041H01L2933/005
Inventor 张万功尹梓伟李国强张曙光刘智崑王文樑郭康贤
Owner DONGGUAN SINOWIN OPTO ELECTRONICS
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