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High-efficiency non-doped ultra-thin light-emitting layer thermally activated delayed fluorescence organic light-emitting diode and its preparation method

A thermal activation delay, light-emitting diode technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components and other directions, can solve the problems of material difficulties, device preparation process difficulty, device preparation process difficulty, etc., and achieve suppression of quenching. quenching effect, significant external quantum efficiency, and the effect of reducing the difficulty of device fabrication

Active Publication Date: 2020-05-22
SOUTH CHINA UNIV OF TECH
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Problems solved by technology

[0003] However, both phosphorescent materials and TADF materials have serious concentration quenching effects, and it is difficult to achieve high-efficiency light emission on the basis of non-doped device structures, and it is also very difficult to develop new high-efficiency non-doped TADF materials. The current strategy Both uniformly disperse the guest luminescent material in the host material to suppress the aggregation and quenching of guest molecules.
Although this method of host-guest doping system can suppress the concentration quenching effect and improve the performance of the device, it is necessary to precisely control the evaporation rate of the host and guest materials in the preparation process of the evaporation-type device, resulting in the The difficulty of the preparation process has been greatly improved
If the currently widely commercialized co-host strategy (two host materials) is adopted, then ternary doping technology is required, and the difficulty of the device fabrication process will further increase

Method used

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  • High-efficiency non-doped ultra-thin light-emitting layer thermally activated delayed fluorescence organic light-emitting diode and its preparation method
  • High-efficiency non-doped ultra-thin light-emitting layer thermally activated delayed fluorescence organic light-emitting diode and its preparation method
  • High-efficiency non-doped ultra-thin light-emitting layer thermally activated delayed fluorescence organic light-emitting diode and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 As shown, the high-efficiency non-doped ultra-thin light-emitting layer thermally activated delayed fluorescence organic light-emitting diode of this embodiment is composed of substrate 1, anode 2, hole transport layer 3, exciton isolation layer 4, light-emitting layer 5, Electron transport layer 6 and cathode 7 constitute.

[0047] Take a 15-20Ωsq covered with a 95nm thick sheet resistor -1 Indium tin oxide (ITO) glass substrate. First, thoroughly clean the substrate, and ultrasonically clean it in isopropanol, tetrahydrofuran, micron-sized conductive glass washing liquid, deionized water (resistivity greater than 18MΩ), deionized water, and isopropanol in an ultrasonic machine. Steps Sonicate for at least 10 minutes. Then dry it thoroughly in an electric blast drying oven to remove residual solvent on the surface. Then ionized oxygen treatment was carried out for 20 minutes to remove the pollutants on the ITO surface, improve the work function of ...

Embodiment 2

[0056] The preparation process was the same as in Example 1, wherein the non-doped ultra-thin light-emitting layer material was replaced by p-ACR-SO, and the thicknesses were 0.08, 0.1, 0.2, 0.4, 0.8, 1.2 nm. The obtained device structure is: ITO(95nm) / TAPC(30nm) / CBP(25nm) / p-ACR-SO(0.08, 0.1, 0.2, 0.4, 0.8, 1.2nm) / TmPyTB(55nm) / LiF(1nm) / Al (100nm). The corresponding conventional doped and undoped device structures are: ITO (95nm) / TAPC (30nm) / CBP:10%p-ACR-SO (25nm) / TmPyTB (55nm) / LiF (1nm) / Al (100nm ); ITO(95nm) / TAPC(30nm) / p-ACR-SO(25nm) / TmPyTB(55nm) / LiF(1nm) / Al(100nm).

[0057] The current density-brightness-voltage characteristic curve, current efficiency-brightness-power characteristic curve efficiency diagram, and external quantum efficiency-brightness characteristic curve diagram of the above-mentioned three types of devices obtained in this embodiment are shown in Figure 7-9 shown.

[0058] Table 2 is a summary table of performance data of devices with different non-do...

Embodiment 3

[0062] The preparation process was the same as in Example 1, wherein the material of the non-doped ultra-thin light-emitting layer was replaced by TZ-SBA, and the thicknesses were 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 nm. The exciton isolation layer was replaced by DEEPO with a thickness of 2nm. A hole blocking layer mCP and an electron blocking layer DPEPO are simultaneously introduced. The resulting device structure is: ITO(95nm) / TAPC(30nm) / mCP(10nm) / DPEPO(2nm) / TZ-SBA(0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8nm) / DPEPO(10nm) / TmPyTB(40nm) / LiF(1nm) / Al(100nm). The corresponding traditional doped and undoped device structures are: ITO (95nm) / TAPC (30nm) / mCP (10nm) / DPEPO:20% TZ-SBA (30nm) / DPEPO (10nm) / TmPyTB (40nm) / LiF(1nm) / Al(100nm); ITO(95nm) / TAPC(30nm) / mCP(10nm) / TZ-SBA(30nm) / DPEPO(10nm) / TmPyTB(40nm) / LiF(1nm) / Al(100nm ). In addition, in order to ensure that the overall thickness of the comparison device is consistent, the doped and non-doped device structures with the same thickness a...

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Abstract

The invention discloses a highly efficient non-doped ultra-thin light-emitting layer heat-activated delayed fluorescent organic light-emitting diode, which consists of sequentially stacked substrates, anodes, hole transport layers, exciton isolation layers, ultra-thin heat-activated delayed fluorescent light-emitting layers, electron transport layer and cathode. The invention also discloses a preparation method of the organic light emitting diode. The invention introduces the exciton isolation layer, suppresses the quenching effect of the space-separated excitons formed by the hole transport material and the electron transport material on the excitons in the light-emitting layer, and at the same time, utilizes the method of an ultra-thin non-doped light-emitting layer to The method of regulating the thickness of the ultra-thin luminescent layer adjusts the degree of dispersion of the thermally activated delayed fluorescent luminescent material and suppresses its concentration quenching effect. The invention greatly improves the performance of the non-doped thermally activated delayed fluorescent organic light-emitting diode, and at the same time can reduce the difficulty of the device preparation process, save production time, and greatly save the amount of light-emitting materials used, and has wide application prospects.

Description

technical field [0001] The invention relates to the field of organic electroluminescent devices, in particular to a heat-activated delayed fluorescent organic light-emitting diode with a high-efficiency non-doped ultra-thin light-emitting layer and a preparation method thereof. Background technique [0002] Currently, organic light-emitting diodes (OLEDs) have been applied in the fields of light emission and display. The luminescent materials used therein can be roughly divided into three categories: traditional fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. Since the theoretical limit of internal quantum efficiency of traditional fluorescent materials is only 25%, while phosphorescent materials and TADF materials can achieve 100% internal quantum efficiency, it is of great significance to develop highly efficient phosphorescent and TADF materials. Among them, phosphorescent materials contain precious rare met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/164H10K85/633H10K85/615H10K85/631H10K85/654H10K85/6576H10K85/6572H10K50/125H10K71/00
Inventor 苏仕健高阔徐志达
Owner SOUTH CHINA UNIV OF TECH
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