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Attapulgite/g-c 3 no 4 /mos 2 Heterojunction composite material, preparation method and use

A technology of attapulgite and g-c3n4, applied in organic compound/hydride/coordination complex catalysts, chemical instruments and methods, water/sludge/sewage treatment, etc., to achieve high stability, low raw material cost, The effect of excellent photocatalytic performance

Active Publication Date: 2020-07-17
HUAIYIN TEACHERS COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] g-C cannot be solved only by doping, copolymerization, and morphology control 3 N 4 The problem that its own electron-holes are easy to recombine, and its visible light utilization range still has a lot of room for expansion

Method used

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  • Attapulgite/g-c <sub>3</sub> no <sub>4</sub> /mos <sub>2</sub> Heterojunction composite material, preparation method and use
  • Attapulgite/g-c <sub>3</sub> no <sub>4</sub> /mos <sub>2</sub> Heterojunction composite material, preparation method and use
  • Attapulgite/g-c <sub>3</sub> no <sub>4</sub> /mos <sub>2</sub> Heterojunction composite material, preparation method and use

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preparation example Construction

[0036] ATP / g-C provided by the present invention 3 N 4 / MoS 2 The preparation method of the heterojunction composite material comprises the following steps:

[0037] (a) ATP / g-C 3 N 4 Thin-layer material preparation: Add 3-12g of attapulgite and 100-140mL of toluene into a four-neck flask in sequence, stir at 60-80°C for 0.5-2 h, then add silane coupling agent KH560, and stir at 60-80°C After 2-4 hours, wash with toluene and absolute ethanol in turn, and dry at 60°C to obtain modified attapulgite (ATP-KH560). Ultrasonic disperse the modified attapulgite in deionized water for 1-3 hours, mix it with the solution of heating and dissolving melamine in deionized water, and reflux at 60-90°C for 2-4 hours; freeze-dry for 24 hours, and grind at 520°C ATP / g-C obtained by roasting 3 N 4 Thin layer material. The purpose of this step is to make g-C 3 N 4 The thin layer is evenly loaded on the surface of the attapulgite to avoid its agglomeration.

[0038] (b) MoS 2 Preparati...

Embodiment 1

[0044] Embodiment 1: ATP / g-C is synthesized according to the following steps 3 N 4 / MoS 2 -10% heterojunction composites:

[0045] (a) ATP / g-C 3 N 4 Thin-layer material preparation: Weigh 3g of dried attapulgite and 100mL of toluene into a four-necked flask in turn, stir at 60°C for 2 hours, then add 2.5mL of silane coupling agent KH560, stir at 60°C for 4 hours, then add toluene, Wash with absolute ethanol and dry in vacuum at 60°C to obtain modified attapulgite (ATP-KH560). Weigh 0.4g of modified attapulgite in deionized water and ultrasonically disperse it for 1h, mix with 0.8g of melamine dissolved in deionized water by heating and reflux for 4h at 80°C; freeze-dry for 24h, grind and roast at 520°C to obtain ATP / g -C 3 N 4 Thin layer material.

[0046] (b) MoS 2 Preparation of nanosheets: Dissolve 0.03g oxalic acid, 0.06g sodium molybdate dihydrate and 0.09g thiourea in 60mL deionized water, stir for 1h, transfer to 100mL polytetrafluoroethylene hydrothermal reac...

Embodiment 2

[0050] Embodiment 2: ATP / g-C is synthesized according to the following steps 3 N 4 / MoS 2 -20% heterojunction composite materials:

[0051] (a) ATP / g-C 3 N 4 Thin-layer material preparation: Weigh 6g of dried attapulgite and 120mL of toluene into a four-neck flask in turn, stir at 70°C for 1h, then add 5mL of silane coupling agent KH560, stir at 70°C for 3h, then add toluene, anhydrous Wash with ethanol and dry in vacuum at 60°C to obtain modified attapulgite (ATP-KH560). Weigh 0.4g of modified attapulgite in deionized water for 2h ultrasonic dispersion, mix with 0.8g of melamine dissolved in deionized water and reflux at 80°C for 4h; freeze-dry for 24h, grind and roast at 520°C to obtain ATP / g -C 3 N 4 Thin layer material.

[0052] (b) MoS 2 Preparation of nanosheets: Dissolve 0.09g oxalic acid, 0.18g sodium molybdate dihydrate and 0.27g thiourea in 60mL deionized water, stir for 1h, transfer to a 100mL polytetrafluoroethylene hydrothermal reactor and react at 180°C...

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Abstract

The invention belongs to the field of photoelectrocatalytic materials, and specifically relates to attapulgite / g‑C 3 N 4 / MoS 2 Preparation method of heterojunction composite materials. Provide a way to combine 2D MoS 2 Nanosheets and attapulgite / g‑C 3 N 4 Thin-layer materials are combined to construct g-C with attapulgite as the axis 3 N 4 / MoS 2 Two-dimensional heterojunction approach via MoS 2 Nanosheets and ATP / g‑C 3 N 4 The covalent bonds and interactions between thin-layer materials establish a bridge for efficient electron transfer to obtain efficient and stable ATP / g‑C 3 N 4 / MoS 2 Photoelectrocatalytic materials.

Description

technical field [0001] The invention belongs to the field of photoelectric catalytic materials, in particular to attapulgite / g-C 3 N 4 / MoS 2 Preparation methods of heterojunction composite materials. Background technique [0002] The use of semiconductor photocatalytic technology to decompose water to produce hydrogen and realize the direct conversion of solar energy to clean energy hydrogen is one of the ultimate ways to solve the energy and environmental crises facing human beings. Therefore, it is of great significance to develop and prepare new photocatalytic materials that respond to visible light to improve the catalytic efficiency. g-C 3 N 4 As a new type of all-organic semiconducting polymer, it has a two-dimensional planar structure similar to graphene, its forbidden band width is 2.7 eV, and its conduction and valence bands are -1.2 eV (vs. ), across the redox window of water, has broad application prospects in the field of visible light catalytic water spli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J31/06C02F1/30C02F101/34C02F101/38
CPCC02F1/30B01J27/24B01J31/069C02F2101/40C02F2101/38C02F2101/34C02F2305/10B01J35/33B01J35/39
Inventor 张莉莉许永帅高蓉蓉高晨修汤超殷竟洲李乔琦赵伟程志鹏戴本林周守勇赵宜江
Owner HUAIYIN TEACHERS COLLEGE
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