A kind of preparation method of Aln nanowire

Abstract

The present invention proposes a preparation method of AlN nanowires, comprising step 1, mixing: mixing Ti powder, Al powder and C powder; step 2, grinding: adding grinding balls into a ball mill tank, and putting the raw materials obtained in step Put it into the ball mill jar, pour alcohol into the ball mill jar until the raw materials are completely covered, put the ball mill jar into the ball mill and fix it, wet mill for 8h~12h; step 3, drying: dry the ground material in a water bath environment Drying, the drying temperature is 50°C~60°C; step 4, sieving: sieving the dried material to separate the grinding balls from the raw materials; step 5, sintering and retrieving: the obtained in step 4 The raw materials are sintered in a nitrogen environment. When the sintering temperature reaches 1300°C or above, keep the temperature for 0.5h~4h, and prepare AlN nanowires by vapor deposition. When the temperature drops, the sintered product, that is, AlN nanowires, can be taken out. . The nanowires prepared by the above preparation method are AlN single crystals, the diameter ranges from 100-200 nm, and the length ranges mostly from 5-10 μm.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing AlN nanowires. Background technique [0002] AlN is a typical III-nitride semiconductor functional material, which has broad application prospects in fields requiring high performance such as electronics, metallurgy, chemical industry and functional ceramics. As an important third-generation semiconductor material, AlN has the characteristics of the highest direct band gap, high thermal conductivity, high melting point, high hardness, excellent chemical stability and non-toxicity. It is used in deep ultraviolet luminescence, ultraviolet detector diodes, flat panel displays It has important applications in optoelectronic devices such as deep ultraviolet lasers, so it is of great significance to study the preparation and properties of one-dimensional AlN nanowires. [0003] However, the existing one-dimensional AlN nanomaterials preparation ...

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Problems solved by technology

[0003] However, the existing one-dimensional AlN nanomaterials preparation process is still not perfect, and a single preparation method cannot meet the requirements of uniform diameter distribution, consistent growth orientation, and large production volume.

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