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Formation method of trench isolation structure, chemical vapor deposition process

A chemical vapor deposition, trench isolation technology, applied in gaseous chemical plating, metal material coating process, electrical components, etc., can solve problems such as lack of silanols, and achieve the effect of optimizing deposition rate, improving film quality and productivity

Active Publication Date: 2021-01-22
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Taking STI trench filling as an example, the current process is in STI's SiO 2 Before deposition, a layer of oxide layer, such as SiO 2 layer, but SiO prepared by ISSG or thermal oxidation reaction 2 lack of silanol

Method used

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  • Formation method of trench isolation structure, chemical vapor deposition process
  • Formation method of trench isolation structure, chemical vapor deposition process
  • Formation method of trench isolation structure, chemical vapor deposition process

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Experimental program
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Embodiment Construction

[0028] During the TEOS-Ozone thermal chemical vapor deposition process, the physical and chemical properties of the semiconductor substrate surface will affect the TEOS-Ozone deposited silicon oxide (SiO 2 ) film deposition rate, uniformity, compactness, etc. The more silicon hydroxyl groups (Si-OH) on the substrate surface, the more favorable the adsorption of TEOS-Ozone reaction intermediates, SiO 2 The better the deposition rate, uniformity and compactness.

[0029] by figure 1 For example: (a) there is a large amount of silicon hydroxyl (Si-OH) on the surface of the semiconductor substrate 10; (b) during the TEOS-Ozone deposition process, TEOS is covered by O 3 activation; (c) TEOS reaction intermediates (reactive intermediates) are adsorbed on the surface of the substrate 10 where there are silicon hydroxyl groups (Si-OH); (d) after a dehydration reaction (Dehydration reaction), the surface of the substrate 10 is adsorbed uniformly, with high density Silicon oxygen bon...

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Abstract

The invention discloses a trench isolation structure forming method and a chemical vapor deposition process. The trench isolation structure forming method includes the steps: providing a semiconductorsubstrate and forming a grinding stop layer on the semiconductor substrate; sequentially etching the grinding stop layer and the semiconductor substrate and forming trenches in the grinding stop layer and the semiconductor substrate; forming silicon oxide layers on the surface of the grinding stop layer, on the side walls of the trenches and at the bottoms of the trenches by an atomic layer deposition process; filling the trenches with silicon oxide by a TEOS-Ozone thermal chemical vapor deposition process, and covering the silicon oxide layers with the silicon oxide. The deposition rate, uniformity and compactness of a TEOS-Ozone silicon oxide film can be optimized, so that film quality and capacity are improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for forming a trench isolation structure and an optimized TEOS-Ozone thermal chemical vapor deposition process. Background technique [0002] In the manufacture of integrated circuits, tetraethylorthosilicate-ozone thermochemical vapor deposition (TEOS (TetraethylOrthosilicate)-Ozone (O 3 ) thermal CVD) process is widely used, such as high aspect ratio (HARP, High Aspect Ration Process) deposition process, sub-atmospheric chemical vapor deposition (SACVD, Sub Atmospheric CVD) process is widely used in shallow trench structure due to its good hole filling ability ( STI, Shallow Trench Isolation) and trench filling of pre-metal dielectric layer (PMD, Pre Metal Dielectric). [0003] During the TEOS-Ozone thermal chemical vapor deposition process, the physical and chemical properties of the substrate surface will affect the TEOS-Ozone deposited silicon oxide (SiO 2 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762C23C16/455C23C16/40
CPCC23C16/402C23C16/45525H01L21/76224
Inventor 鲁旭斋黄建张锋吴孝哲吴龙江林宗贤
Owner 淮安西德工业设计有限公司