Photoelectric detection diode based on diamond/InP/SiC double heterojunction and preparation method of diode

Abstract

The invention relates to a photoelectric detection diode based on diamond / InP / SiC double heterojunction and a preparation method of the diode. The method includes the steps: continuously growing a homogeneous epitaxial layer, an InP layer and a diamond layer on the upper surface of an SiC substrate; growing a first metal material on the upper surface of the diamond layer to form a light absorptionlayer; growing a second metal layer on the lower surface of the SiC substrate to form a bottom electrode; growing a third metal material on the upper surface of the light absorption layer to form a top electrode to prepare the photoelectric detection diode based on the diamond / InP / SiC double heterojunction. According to the photoelectric detection diode based on the diamond / InP / SiC double heterojunction and the preparation method of the diode, a diamond material is applied to the light absorption layer, the light transmission rate of the material in a solar blind area is high, the light absorption capability of the light absorption layer is improved, and the device performance of the photoelectric detection diode can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a diamond / InP / SiC double heterojunction-based photodetection diode and a preparation method thereof. Background technique [0002] With the continuous deepening of research and exploration in medical temperature measurement, aerospace, radar detection and other fields in recent years, production and development have higher and higher requirements for light, especially ultraviolet light and other related detectors, such as photoelectric countermeasures, mid-ultraviolet countermeasures and opposition Resistance is increasingly favored by the military. The wave band with a wavelength of 10-400nm in electromagnetic waves is called ultraviolet radiation, which is different from both infrared radiation and visible light radiation; among them, the spectral region in which the ultraviolet rays from solar radiation are almost completely absorbed by the atmosphere is c...

AI Technical Summary

Problems solved by technology

[0003] A photodetector diode is a semiconductor device based on a PN junction. It can generally measure ultraviolet light to infrared light. Existing photodetector diodes are generally photodetector diodes based on SiC, GaN, ZnO and other materials, which belong to far-ultraviolet detection diodes. Its detection wavelength is generally less than 220nm, and there are still many problems in the current photodetection diodes, such as weak light absorption ability and weak ultraviolet detection ability, etc.

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