A kind of Gan-based LED electrode structure and manufacturing method thereof

Abstract

A GaN-based LED electrode structure and a manufacturing method thereof are that a P electrode is arranged on an ITO current spreading layer, and an N electrode is arranged on a mesa of an n-type GaN layer; A Cr layer, a first Al layer, a Ti layer, an Au layer, a second Cr layer and a second Al layer; the fabrication method includes the following steps: (1) fabricating an ITO thin film layer, and etching the n-type GaN layer mesa; (2) ) to make photolithographic electrode patterns to form clad electrode structures; (3) to make electrode structures. The present invention realizes the cladding electrode structure by controlling the appropriate chamfering of the photoresist pattern. Through the reasonable electrode structure design, the luminous efficiency of the die is greatly improved while ensuring the good adhesion of the electrode, and the whole The electrode structure is simple in design, and all conventional vapor deposition materials are used. The entire fabrication process takes less time and consumes less cost, and is suitable for the large-scale fabrication of all GaN-based LED chips.

Description

technical field [0001] The invention relates to a GaN-based LED tube core with a high-reflectivity electrode structure and a specific manufacturing method thereof, belonging to the technical field of semiconductor processing. Background technique [0002] LED (Light Emitting Diode) is a device that relies on semiconductor P-N junctions for electroluminescence. It is made of compounds such as nitrogen, arsenic, gallium, and phosphorus. It can convert electrical energy into light energy through the recombination of electrons and holes. Radiant. Its basic structure is a piece of electroluminescent semiconductor material, which is a solid-state semiconductor device that can directly convert electricity into light. The LED is placed on a shelf with leads, and then sealed with epoxy resin around it. , It is beneficial to protect the internal core wire, so the shock resistance of LED is very good. At the same time, LED is widely recognized as the fourth-generation lighting source...

AI Technical Summary

Problems solved by technology

However, in this structure, there is no mention of a specific method of forming a coated electrode, and the electrode structure film layer has as many as 9 layers to form a film under the condition of a high vacuum in the evaporation chamber, which takes a long time and the production efficiency is low. Low, at the same time, the design of TiN / Pt as the current blocking layer and conductive layer makes the cost of the whole electrode structure higher, the adhesion between TiN and Al layer is not very ideal, and there is a certain proportion of difficult welding lines when making electrodes

[0006] Therefore, under the premise that the production efficiency, production cost and luminous efficiency of the existing GaN-based LED electrode structure cannot be uniformly resolved, it is necessary to study a kind of electrode structure with moderate production cost, high efficiency, significantly improved electrode reflectivity and stable structure. LED electrode structure and specific manufacturing method thereof

Images