White light perovskite type electroluminescent device and preparation method thereof
An electroluminescent device, a perovskite-type technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as deterioration of luminous performance, light-emitting layer contact, and damage to the spacer layer, so as to promote The effect of carrier transport, avoiding ion exchange, and inhibiting corrosion
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[0035] The invention also provides a method for preparing a white light perovskite electroluminescent device, which includes the following steps:
[0036] 1) The transparent substrate 1 is ultrasonically cleaned with acetone, deionized water and ethanol solution. After cleaning, the transparent substrate 1 is blown dry with dry nitrogen, and the transparent substrate 1 is placed in a vacuum coating chamber to plate the anode layer 2;
[0037] 2) Spin-coating the hole transport layer 3 on the anode layer 2, and heat-anneal and dry to obtain the substrate A;
[0038] 3) Move the substrate A into the glove box, spin-coat the blue perovskite luminescent layer 4 on the hole transport layer 3, and then perform thermal annealing treatment to obtain the substrate B;
[0039] 4) Move the substrate B into the glove box and spin-coat the spacer layer 5 on the blue perovskite light-emitting layer 4, and then perform thermal annealing treatment and simultaneously irradiate with ultraviolet rays to ...
Embodiment 1
[0049] Clean the ITO with a surface roughness of less than 1nm, dry it with nitrogen after cleaning; spin-coating on the ITO surface to prepare PEDOT:PSS, and conduct thermal annealing (150℃, 15min) to prepare a hole transport layer, in the hole transport layer Preparation of blue perovskite luminescent layer CH by spin coating 3 NH 3 PbCl 2 Br, and thermal annealing treatment (100℃, 10min), spin coating on the blue light emitting layer to prepare TFB:BP:PC 61 BM (1:0.05:1,5mg / ml) spacer layer (2000rpm, 40s, 15nm), and thermal annealing treatment (100℃, 5min), while thermal annealing, irradiate the substrate with a 365nm ultraviolet lamp at the same time Spin-coated yellow perovskite luminescent layer CH on the layer 3 NH 3 PbBr 2 I, and perform thermal annealing treatment (110° C., 10 min), evaporate TPBi on the yellow light perovskite light-emitting layer to prepare an electron transport layer (40 nm); evaporate a metal cathode Ag (100 nm) on the electron transport layer. Turn...
Embodiment 2
[0051] Clean the ITO with a surface roughness of less than 1nm, dry it with nitrogen after cleaning; spin-coating on the ITO surface to prepare PEDOT:PSS, and conduct thermal annealing (150℃, 15min) to prepare a hole transport layer, in the hole transport layer Preparation of blue perovskite luminescent layer CH by spin coating 3 NH 3 PbCl 2 Br, and thermal annealing treatment (100℃, 10min), spin coating on the blue light emitting layer to prepare TFB:BP:PC 61 BM (1:0.05:1,5mg / ml) spacer layer (2000rpm, 40s, 15nm), and thermal annealing treatment (100℃, 10min), while thermal annealing, irradiate the substrate with a 365nm ultraviolet lamp at the same time Spin-coated yellow perovskite luminescent layer CH on the layer 3 NH 3 PbBr 2 I, and perform thermal annealing treatment (110° C., 10 min), evaporate TPBi on the yellow light perovskite light-emitting layer to prepare an electron transport layer (40 nm); evaporate a metal cathode Ag (100 nm) on the electron transport layer. Tur...
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