Method for quickly preparing FeTe2 at constant pressure

Abstract

The invention discloses a method for quickly preparing FeTe2 at a constant pressure. According to the stoichiometric ratio of a chemical formula FeTe2, Fe powder and Te powder are evenly mixed under the protection of inert gas, then, powder is pressed and formed, the obtained product is assembled through a sintering mould and sintered at the constant pressure in a vacuum furnace at a temperature of 803-923 K; after the temperature is kept for 1-180 min, the mixture is cooled along with a furnace to room temperature, and then, the sample is taken out. Compared with the prior art, the method disclosed by the invention is characterized in that a vacuum high-temperature sintering method is adopted under a constant pressure condition to quickly prepare a single-phase FeTe2 thermoelectric material, micropores are evenly distributed on the sample, and the internal crystal structure of the sample forms a spatial stereo mesh shape.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, in particular to a rapid preparation of FeTe under normal pressure 2 Methods. Background technique [0002] Thermoelectric materials are semiconductor materials that can directly convert heat energy and electric energy. Thermoelectric devices made of thermoelectric materials can use various waste heat to generate electricity, and can also use electric energy to achieve cooling. Thermoelectric materials have broad application prospects in today's energy shortage and severe environmental protection situation, and have become one of the research hotspots in the field of new energy materials in recent years. The performance of thermoelectric materials is generally characterized by the dimensionless thermoelectric figure of merit ZT value, ZT=S 2 S, σ, λ and T in the σT / λ formula are Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature, respect...

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Problems solved by technology

[0003] Alloy compound FeTe with binary structure 2 It is a semiconductor material with potential application value. Studies have shown that FeTe 2 The bandgap is very narrow, and it exhibits three-dimensional magnetic order and semiconducting, FeTe prepared at high pressure 2 Has a lower resistivity, but the alloy compound FeTe 2 There are relatively few reports on the study of thermoelectric materials

[0004] Alloy compound FeTe 2 Traditional preparation methods require long-term smelting and annealing treatment, or special special equipment such as high-temperature and high-pressure equipment and plasma electroactivation sintering, and the preparation process is complicated, requiring secondary operations on the sample, which inevitably introduces pollution and is not easy to prepare single-phase FeTe 2 alloy compound

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