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Titanium-dioxide nanorod array film and preparation method thereof

A nanorod array, titanium dioxide technology, applied in titanium dioxide, chemical instruments and methods, titanium oxide/hydroxide and other directions, can solve the problems of surface orientation disorder, instability, poor uniformity of porous titanium dioxide film, etc. Defect reduction effect

Inactive Publication Date: 2019-03-12
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the prior art, the Chinese invention patent application with the application publication number CN106145692A discloses a method for preparing a titanium dioxide seed layer on a conductive substrate by dipping and pulling, but the titanium dioxide seed layer prepared by this method has uneven thickness, There are many gaps in the film, it is not dense enough, and it is not firmly bonded to the substrate, etc.
The Chinese invention patent application with the application publication number CN101886249A discloses a method for preparing a porous titanium dioxide film by immersing the titanium dioxide film prepared by magnetron sputtering in an acid solution. Although the method is simple and easy, the prepared porous titanium dioxide film has uniformity. Poor, the surface orientation is chaotic, and it is difficult to ensure the uniform thickness of the film after acid corrosion
The Chinese invention patent application with the application publication number CN108677156A discloses a method for preparing a titanium dioxide nanorod array film. The method includes the following steps: chemically cleaning the substrate material, cleaning it with radio frequency plasma, and then using magnetron sputtering technology The titanium film is prepared by sputtering deposition, and finally it is prepared at 600°C for 1 hour. Although this method is environmentally friendly and the preparation process is simple, it is difficult to ensure the orientation of the titanium dioxide crystal.

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Embodiment 1

[0039] The preparation method of the titanium dioxide nanorod array film of the present invention comprises the following steps:

[0040] (1) Use FTO conductive glass of 15×15×2.2mm as the substrate, ultrasonically clean it with detergent, acetone, isopropanol and deionized water, and dry it for later use; take the titanium target with a purity of 99.99wt%, and the titanium target The size is Φ50×4mm.

[0041](2) Put the titanium target and FTO conductive glass into the magnetron sputtering chamber, and wait until the background vacuum reaches 10 -4 At Pa, 99.99% argon gas is introduced at room temperature, the target base distance is adjusted to 60 mm, and the argon gas flow rate is controlled to be 30 sccm under a pressure of 1.0 Pa, the sputtering power is 100 W, and the sputtering is 10 min, and a thin film deposited with titanium metal is obtained. FTO conductive glass.

[0042] (3) Put the conductive glass deposited with a metal titanium film into absolute ethanol for ...

Embodiment 2

[0051] The preparation method of the titanium dioxide nanorod array film of the present invention comprises the following steps:

[0052] (1) Use FTO conductive glass of 15×15×2.2mm as the substrate, ultrasonically clean it with detergent, acetone, isopropanol and deionized water, and dry it for later use; take the titanium target with a purity of 99.99wt%, and the titanium target The size is Φ50×4mm.

[0053] (2) Put the titanium target and FTO conductive glass into the magnetron sputtering chamber, and wait until the background vacuum reaches 10 -4 At Pa, 99.99% argon gas is introduced at room temperature, the target base distance is adjusted to 70 mm, and at a pressure of 1.0 Pa, the argon gas flow rate is controlled to be 30 sccm, the sputtering power is 125 W, and the sputtering is 10 min to obtain a deposited metal titanium film. FTO conductive glass.

[0054] (3) Put the conductive glass deposited with a metal titanium film into absolute ethanol for 20 minutes, and th...

Embodiment 3

[0063] The preparation method of the titanium dioxide nanorod array film of the present invention comprises the following steps:

[0064] (1) Use FTO conductive glass of 15×15×2.2mm as the substrate, ultrasonically clean it with detergent, acetone, isopropanol and deionized water, and dry it for later use; take the titanium target with a purity of 99.99wt%, and the titanium target The size is Φ50×4mm.

[0065] (2) Put the titanium target and FTO conductive glass into the magnetron sputtering chamber, and wait until the background vacuum reaches 10 -4 At Pa, 99.99% argon gas was introduced at room temperature, the distance between the target and the base was adjusted to 80 mm, and at a pressure of 1.0 Pa, the argon gas flow rate was controlled to be 30 sccm, the sputtering power was 140 W, and the sputtering was 20 min to obtain a titanium film deposited on it. FTO conductive glass.

[0066] (3) Put the conductive glass deposited with a metal titanium film into absolute ethan...

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Abstract

The invention relates to a titanium-dioxide nanorod array film and a preparation method thereof and belongs to the technical field of oxide semiconductor materials. The preparation method of the titanium-dioxide nanorod array film mainly comprises the following steps of: placing a titanium dioxide film material into a precursor solution to carry out hydrothermal reaction, then insulating for 30-60minutes at a temperature of 450-550 DEG C, and finally placing into aqueous TiCl4 solution to treat for 30-60 minutes at a temperature of 80-100 DEG C, to obtain the titanium-dioxide nanorod array film. The titanium-dioxide nanorod array film and the preparation have the beneficial effects that the used technique is matured and is easy in operation, the process stability is good, the film-formingquality is high, and the cost is lower, so that the promotion and application basis is good.

Description

technical field [0001] The invention relates to a titanium dioxide nanorod array film and a preparation method thereof, belonging to the technical field of oxide semiconductor materials. Background technique [0002] Nano-titanium dioxide material is a widely used photoanode film material, and the difference in its morphology and structure will have different effects on the photoelectric performance of the photoanode. Due to the disordered accumulation of nanocrystalline particles, photogenerated electrons need to pass through the interface between nanocrystalline particles many times during the transmission process, which prolongs the transmission distance of photogenerated electrons. In addition, the existence of defect states and surface states of nanocrystalline particles also increases the recombination probability of electrons, thereby reducing the collection efficiency of photogenerated electrons. The existence of the one-dimensional titanium dioxide nanorod array fi...

Claims

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Application Information

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IPC IPC(8): C01G23/053B82Y40/00
CPCB82Y40/00C01G23/053C01G23/0536C01P2002/72C01P2004/03C01P2004/16
Inventor 邓亚丰马战红任凤章明晓丽竹笛郭大山
Owner HENAN UNIV OF SCI & TECH