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Method for preparing bismuth telluride thermoelectric thin film with heterostructure

A technology of thermoelectric thin film and heterogeneous structure, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of single structure of thermoelectric thin film material and low thermoelectric performance, and achieve the advantages of transportation, thermal Reduced conductivity and reduced scattering effects

Inactive Publication Date: 2019-04-02
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Therefore, the technical problem to be solved in the present invention is to overcome the Bi 2 Te 3 The thermoelectric thin film material has a single structure, doping is easy to introduce impurity phases, and has the disadvantages of low thermoelectric performance. It provides a Bi film with a heterogeneous structure and high thermoelectric performance. 2 Te 3 Preparation method of thermoelectric thin film

Method used

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  • Method for preparing bismuth telluride thermoelectric thin film with heterostructure
  • Method for preparing bismuth telluride thermoelectric thin film with heterostructure
  • Method for preparing bismuth telluride thermoelectric thin film with heterostructure

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Embodiment 1

[0046] This embodiment provides a method for preparing a bismuth telluride thermoelectric thin film with a heterostructure, which specifically includes the following steps:

[0047] (1) Before preparing the bismuth telluride thermoelectric thin film, the equipment cavity should be cleaned first, and the corresponding target head and shield cover should be wiped with alcohol and acetone;

[0048] (2) Mix metal powder Bi and Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a high-density bismuth telluride alloy target, And install the bismuth telluride alloy target on the target head connected to the DC source in the cavity of the magnetron sputtering equipment; the metal powder Te with a purity of 99.999% is made into a simple tellurium by using a hot isostatic pressing device under the condition of 150MPa target, and install the tellurium simple substance target on the target he...

Embodiment 2

[0059] This embodiment provides a method for preparing a bismuth telluride thermoelectric thin film with a heterostructure, which specifically includes the following steps:

[0060] (1) Before preparing the bismuth telluride thermoelectric thin film, the equipment cavity should be cleaned first, and the corresponding target head and shield cover should be wiped with alcohol and acetone;

[0061] (2) Mix metal powder Bi and Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a high-density bismuth telluride alloy target, And install the bismuth telluride alloy target on the target head connected to the DC source in the cavity of the magnetron sputtering equipment; the metal powder Te with a purity of 99.999% is made into a simple tellurium by using a hot isostatic pressing device under the condition of 150MPa target, and install the tellurium simple substance target on the target he...

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Abstract

The invention discloses a method for preparing a bismuth telluride thermoelectric thin film with a heterostructure. The bismuth telluride thermoelectric thin film is prepared by a magnetron sputteringmethod. The method comprises the steps that firstly, a bismuth telluride (Bi2Te3) alloy target and a tellurium (Te) single substance target are installed, and then a cleaned magnesium oxide (MgO) single crystals is fixed to a substrate stage; the distance between the bismuth telluride alloy target and the magnesium oxide single crystal substrate is adjusted to be 120mm-140mm, the distance betweenthe tellurium single substance target and the magnesium oxide single crystal substrate is adjusted to be 110mm-150mm, and vacuum-pumping is performed to be 4x10<-4>Pa-6x10<-4>Pa; then the magnesium oxide (MgO) substrate is heated to 320 DEG C-400 DEG C, argon (Ar) is introduced, a direct-current power supply and a radio frequency power supply are separately turned on under the conditions that theworking pressure is 1 Pa-3 Pa, the power of the direct-current power supply is set to be 20 W-25 W, the power of the radio-frequency power supply is set to be 25W-40W, and then film coating is performed by co-sputtering; and finally, the sputtered thin film is annealed at 350 DEG C-450 DEG C to form the bismuth telluride thermoelectric thin film with the heterostructure.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric thin film preparation, in particular to a preparation method of a bismuth telluride thermoelectric thin film with a heterostructure. Background technique [0002] The energy problem is one of the great challenges faced by contemporary mankind, and the economic development is closely related to the sustainable utilization of energy. At present, fossil energy represented by coal and natural gas is still the main energy form. According to reliability estimates, by 2200, these non-renewable energy sources will be exhausted. Therefore, it is an urgent task for us to develop new forms of energy, such as wind energy, water energy, solar energy, etc., but the development and utilization of these energy sources require huge human and material resources. Thermoelectric materials, as a very competitive energy alternative medium, can directly convert thermal energy into electrical energy based on the ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/58
CPCC23C14/0623C23C14/352C23C14/5806
Inventor 商红静丁发柱古宏伟董泽斌黄大兴许文娟谢波玮张华
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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