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Method for manufacturing a low-temperature polysilicon display panel

A technology of low-temperature polysilicon and a manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as pollution, avoid lattice defects, improve lattice arrangement structure, and improve yield and quality. Effect

Inactive Publication Date: 2019-04-05
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the cleaning step with hydrofluoric acid is carried out in a general atmospheric environment, the problem of particles or metal ions remaining on the surface of the amorphous silicon layer after cleaning cannot be avoided, and the use of hydrofluoric acid is likely to cause product pollution and environmental pollution. Pollution

Method used

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  • Method for manufacturing a low-temperature polysilicon display panel
  • Method for manufacturing a low-temperature polysilicon display panel

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Embodiment Construction

[0029] Please refer to figure 1 and figure 2 , The method for manufacturing a low-temperature polysilicon display panel of the present invention includes: a vacuum environment providing step S01, a substrate providing step S02, a next silicon oxide layer forming step S03, a silicon nitride layer forming step S04, a silicon nitride layer forming step S04, the previous A silicon oxide layer forming step S05, an amorphous silicon layer forming step S06, a protective layer forming step S07, and an annealing step S08.

[0030] The vacuum environment providing step S01 includes providing a vacuum environment 100 . In an embodiment of the present invention, the vacuum environment 100 is a vacuum chamber. The vacuum chamber is connected with a vacuum pump 110, and the vacuum pump 110 is used to evacuate the vacuum chamber. The vacuum pump 110 can evacuate the vacuum chamber in the whole process to maintain the vacuum degree in the vacuum chamber. Alternatively, the vacuum pump 11...

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Abstract

The invention discloses a method for manufacturing a low-temperature polysilicon display panel. The method comprises the steps of: a vacuum environment providing step: providing a vacuum environment;a substrate providing step: providing a glass substrate; a step of forming a next silicon oxide layer: forming the next silicon oxide layer on the glass substrate; a step of forming a silicon nitridelayer: comprising forming a silicon nitride layer on the next silicon oxide layer; a step of forming of a last silicon monoxide layer: forming a last silicon monoxide layer on the silicon nitride layer; a noncrystalline silicon forming step: forming a noncrystalline silicon layer on the last silicon monoxide layer in the vacuum environment; a protection layer forming step: forming a protection layer on the noncrystalline silicon layer; and an annealing step: performing quasimolecule laser annealing for the noncrystalline silicon layer to form polycrystalline silicon on the noncrystalline silicon layer. The method for manufacturing a low-temperature polysilicon display panel avoids the problem that the generated polycrystalline silicon crystal lattice is defective due to residual airborne particles or metal ions on the amorphous silicon layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a low-temperature polysilicon display panel, which can avoid the process of performing Excimer-Laser Annealing (ELA) on an amorphous silicon (a-Si) layer. Particles or metal ions adhering from the air remain on the silicon layer, causing defects in the crystal lattice of polysilicon formed by the amorphous silicon layer and reducing the yield of the display panel. Background technique [0002] Low Temperature Poly-silicon (LTPS) is a new generation of thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) technology, the biggest difference between the technology and the traditional amorphous silicon display is that the LTPS response speed is relatively fast Fast, and has the advantages of high brightness, high resolution, and low power consumption. [0003] In the process of manufacturing low-temperature polysilicon display panels, it is necessary t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1259H01L27/1274H01L21/02422H01L21/02488H01L21/02505H01L21/02532H01L21/02675H01L21/321H01L27/127H01L21/02057H01L21/02164H01L21/0217H01L21/022H01L21/02592H01L21/67017H01L27/1218H01L27/1262
Inventor 江艺
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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