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32results about How to "Arrangement structure optimization" patented technology

Integrated impedance-loaded sound surface wave gas sensor

The invention discloses an integrated impedance-loaded sound surface wave gas sensor based on a Si (silicon) substrate. The integrated impedance-loaded sound surface wave gas sensor comprises a substrate, a piezoelectric layer, an input / output interdigital transducer, a reflective interdigital transducer, a sensitive interdigital electrode and a gas-sensitive thin film. The integrated impedance-loaded sound surface wave gas sensor has the advantages that by growing one thin SiO2 (silicon dioxide) insulation layer and one piezoelectric layer on the Si substrate, the good temperature characteristic is realized; the material of the Si substrate has the characteristics of low cost, large size and conductivity, and can be combined with the integrated circuit industry; the arrangement structure of the interdigital electrode is optimized, the sound wave reflection caused by the external sensor is reduced, and the parasitic effect caused by connecting wires is reduced; the interdigital transducer and the sensitive interdigital electrode are manufactured by one step, so that the simplicity in the manufacturing process is guaranteed, and the large-scale production is easily realized; the wireless passive measuring of the sensor is realized, the sensing part which is easily influenced by outside is separated from a signal sending part, and the application range of the sensor is widened.
Owner:HUAZHONG UNIV OF SCI & TECH

Iodine-doped graphene thin film with high thermal stability and method for preparing iodine-doped graphene thin film

InactiveCN108423671AEnhance interactionNot easy to escape and volatilizeGrapheneCvd grapheneOptoelectronics
The invention discloses an iodine-doped graphene thin film with high thermal stability. The iodine-doped graphene thin film comprises multilayer graphene nanoplatelets mixed with iodine dopants. The multilayer graphene nanoplatelets are randomly stacked along the directions of planes of the multilayer graphene nanoplatelets. The invention further discloses a method for preparing the iodine-doped graphene thin film with the high thermal stability. The method includes depositing graphene nanoplatelets on substrates to form graphene thin films; depositing the iodine dopants on the graphene thin films to obtain the iodine-doped graphene thin film. The iodine-doped graphene thin film and the method have the advantages that the multilayer graphene nanoplatelets are stacked to form compact structures of the iodine-doped graphene thin film, acting force between the graphene nanoplatelets and the iodine dopants can be enhanced, the steric hindrance of the iodine dopants can be enlarged, the iodine dopants are difficult to escape or volatile, and accordingly the thermal stability of the iodine-doped graphene thin film can be improved; array structures of graphene and the iodine dopants are improved by the aid of step-by-step deposition processes, accordingly, the iodine-doped graphene thin film prepared by the aid of the method is still thermally stable even under the condition of the high temperatures of 500 DEG C, obvious effects can be realized, and the iodine-doped graphene thin film and the method are suitable for popularization.
Owner:NORTHWEST UNIV

Method for manufacturing a low-temperature polysilicon display panel

The invention discloses a method for manufacturing a low-temperature polysilicon display panel. The method comprises the steps of: a vacuum environment providing step: providing a vacuum environment;a substrate providing step: providing a glass substrate; a step of forming a next silicon oxide layer: forming the next silicon oxide layer on the glass substrate; a step of forming a silicon nitridelayer: comprising forming a silicon nitride layer on the next silicon oxide layer; a step of forming of a last silicon monoxide layer: forming a last silicon monoxide layer on the silicon nitride layer; a noncrystalline silicon forming step: forming a noncrystalline silicon layer on the last silicon monoxide layer in the vacuum environment; a protection layer forming step: forming a protection layer on the noncrystalline silicon layer; and an annealing step: performing quasimolecule laser annealing for the noncrystalline silicon layer to form polycrystalline silicon on the noncrystalline silicon layer. The method for manufacturing a low-temperature polysilicon display panel avoids the problem that the generated polycrystalline silicon crystal lattice is defective due to residual airborne particles or metal ions on the amorphous silicon layer.
Owner:WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

An Integrated Impedance Load Surface Acoustic Wave Gas Sensor

The invention discloses an integrated impedance-loaded sound surface wave gas sensor based on a Si (silicon) substrate. The integrated impedance-loaded sound surface wave gas sensor comprises a substrate, a piezoelectric layer, an input / output interdigital transducer, a reflective interdigital transducer, a sensitive interdigital electrode and a gas-sensitive thin film. The integrated impedance-loaded sound surface wave gas sensor has the advantages that by growing one thin SiO2 (silicon dioxide) insulation layer and one piezoelectric layer on the Si substrate, the good temperature characteristic is realized; the material of the Si substrate has the characteristics of low cost, large size and conductivity, and can be combined with the integrated circuit industry; the arrangement structure of the interdigital electrode is optimized, the sound wave reflection caused by the external sensor is reduced, and the parasitic effect caused by connecting wires is reduced; the interdigital transducer and the sensitive interdigital electrode are manufactured by one step, so that the simplicity in the manufacturing process is guaranteed, and the large-scale production is easily realized; the wireless passive measuring of the sensor is realized, the sensing part which is easily influenced by outside is separated from a signal sending part, and the application range of the sensor is widened.
Owner:HUAZHONG UNIV OF SCI & TECH
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