Grinding solution and preparation method thereof

A technology of grinding liquid and grinding sand, which is applied in chemical instruments and methods, and other chemical processes, can solve the problems of difficulty in ensuring the grinding quality of the grinding object and the decrease of grinding efficiency with the grinding time, so as to maintain the grinding efficiency and not reduce the efficiency Effect
CN109628064AInactive Publication Date: 2019-04-16东莞市希尔金属材料有限公司

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
东莞市希尔金属材料有限公司
Publication Date
2019-04-16
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a grinding solution and a preparation method thereof. The grinding liquid is used for batch processing of semi-conductor material chips of novel silicon wafers, silicon chips and the like. The grinding solution comprises, by weight, 10%-30% of grinding sands, 3%-8% of an anti-rusting lubricant, 0.5%-2% of a flotation reagent, 0.5%-3% of a moistening agent, 0.1%-1% of a suspending agent and 56%-85.9% of deionized water. The grinding liquid and the preparation method have the advantages that inorganic alkali is not needed, which is safe and protects the environment, the grinding efficiency is maintained under the condition that the performance of the grinding solution is not reduced, the grinding sands can uniformly act on the surfaces of the silica wafers or the silica chips in the grinding process, and therefore the long-term use of the grinding solution is achieved while the efficiency is not reduced.
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Description

technical field

[0001] The invention relates to the technical field of grinding material processing, in particular to a grinding liquid and a preparation method thereof. Background technique

[0002] Silicon is a semiconductor material, and its own conductivity is not very good. To make silicon into a semiconductor material that conducts electricity well, it must be converted into wafers. Polysilicon is formed separately from many small single crystals with different crystal orientations and cannot be used for semiconductor circuits. Polysilicon must be melted into single crystals to be processed into wafers used in semiconductor applications. Processing to form silicon wafers involves doping, melting, cutting, grinding, etching and cleaning. In order to be able to print integrated circuits on silicon wafers and combine them closely with other components, the surface of silicon wafers must be straight. Higher and higher requirements have been put forward.

[0003] Howeve...

Claims

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