Transistor and preparation method thereof
A technology of transistor and thermal evaporation method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc. It can solve the problems of poor density, low flatness, and inability to achieve benign growth of the modified layer.
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[0038] The present invention also provides a method for preparing the transistor, comprising the following steps:
[0039] Depositing the material of the insulating layer on the surface of the silicon wafer by atomic layer deposition, and annealing to obtain a silicon wafer deposited with the insulating layer;
[0040] immersing the silicon wafer deposited with an insulating layer in a solution containing a phosphoric acid-based organic compound to form a modification layer on the surface of the insulating layer;
[0041] Depositing an organic semiconductor layer material on the surface of the modification layer by thermal evaporation, forming an organic semiconductor layer on the surface of the modification layer;
[0042] A metal source and drain electrode material is deposited on the surface of the organic semiconductor layer by thermal evaporation, and a metal source and drain electrode layer is formed on the surface of the organic semiconductor layer to obtain a transisto...
Embodiment 1
[0058] according to figure 1 Structure shown:
[0059] Place a p++ type silicon wafer substrate with a size of 15mm*15mm and a thickness of 500μm on a silicon wafer holder, and place it in sequence with acetone, isopropanol, absolute ethanol, hydrofluoric acid, concentrated sulfuric acid, and ultrapure In a beaker of water, after ultrasonication for 5 minutes, take out the washed silicon wafer and dry it to obtain the pretreated silicon wafer substrate;
[0060] Preheat the ALD equipment, and when the temperature of the reaction chamber of the ALD equipment rises to 250°C, put the pretreated silicon wafer substrate into the chamber to deposit Al2O3, after deposition, in the RTP equipment, at 300 The annealing treatment is carried out under the condition of ℃, and the annealing time is controlled to be 1h, and an aluminum oxide insulating layer with a thickness of 40nm is obtained on the surface of the silicon wafer;
[0061] Soak the silicon wafer deposited with the Al2O3 in...
Embodiment 2
[0067] Place a p++ type silicon wafer substrate with a size of 15mm*15mm and a thickness of 500μm on a silicon wafer holder, and place it in sequence with acetone, isopropanol, absolute ethanol, hydrofluoric acid, concentrated sulfuric acid, and ultrapure In a beaker of water, after ultrasonication for 5 minutes, take out the washed silicon wafer and dry it to obtain the pretreated silicon wafer substrate;
[0068] Preheat the ALD equipment. When the temperature of the reaction chamber of the ALD equipment rises to 250°C, put the pretreated silicon wafer substrate into the chamber to deposit zirconia. Conditions for annealing treatment, control the annealing time to 1h, and obtain a zirconia insulating layer with a thickness of 40nm on the surface of the silicon wafer;
[0069] Soak the silicon wafer deposited with a zirconia insulating layer in an anhydrous ethanol solution of PA-C12 with a concentration of 0.2mmol / L at a temperature of 70°C for 12 hours; After rinsing with ...
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Abstract
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