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A graphene strip with neat edges, its preparation method and application

A graphene and edge technology, which is applied in the field of graphene strip preparation, can solve the problems of uneven strip edges, uncontrollable width, complicated process, etc., and achieves the advantages of reducing scattering, maintaining intrinsic properties, and simple process operation. Effect

Active Publication Date: 2021-03-16
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the strips prepared by these methods have the disadvantages of irregular edges, relatively complicated process, uncontrollable strip length and width, and difficult positioning.

Method used

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  • A graphene strip with neat edges, its preparation method and application
  • A graphene strip with neat edges, its preparation method and application
  • A graphene strip with neat edges, its preparation method and application

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preparation example Construction

[0023] As an aspect of the technical solution of the present invention, a method for preparing a graphene strip with neat edges, which it relates to, includes:

[0024] Photolithographic patterning of graphene;

[0025] growing a metal film on the patterned graphene, after which the metal film is removed;

[0026] Hydrogen plasma etching is performed on the patterned graphene to obtain graphene strips with neat edges (also referred to as graphene nano-strips).

[0027] In some specific embodiments, the preparation method further includes: before performing photolithography patterning, firstly transferring the graphene to the substrate.

[0028] Specifically, the preparation method includes: patterning by ordinary lithography or electron beam lithography, migrating graphene to the substrate, and then exposing the required pattern by photolithography or electron beam lithography, and the pattern size can be in the nanometer The scale can also be on the micrometer scale. That ...

Embodiment 1

[0057] The method for preparing neat edge graphene strips in the present embodiment comprises the following steps:

[0058] (1) The substrate material was thermally oxidized to grow a silicon wafer of 300 nm silicon dioxide, and the graphene was migrated after cleaning the substrate.

[0059] (2) Ordinary lithography or electron beam lithography, apply glue to the graphene-migrated sample on the substrate, and then use lithography or electron beam lithography to expose the desired pattern, and the pattern size can be in the nanoscale or in the micron scale.

[0060] (3) Growth of metal film: Magnetron sputtering was used to grow zinc with a thickness of 20 nm on the sample after photolithography and development.

[0061] (4) Hydrogen plasma etching: at room temperature, pure hydrogen plasma is used, the power is set to 50W, the flow rate of 100SCCM is adopted, the air pressure is 600Pa, and the etching time is 5 minutes. During the etching process, a vacuum pump is used to k...

Embodiment 2

[0063] The method for preparing neat edge graphene strips in the present embodiment comprises the following steps:

[0064] (1) Silicon wafers with 100 nm silicon dioxide were grown by thermal oxidation of substrate material, and graphene was migrated after cleaning the substrate.

[0065] (2) Ordinary lithography or electron beam lithography, apply glue to the graphene-migrated sample on the substrate, and then use lithography or electron beam lithography to expose the desired pattern, and the pattern size can be in the nanoscale or in the micron scale.

[0066] (3) Growth of metal film: Magnesium with a thickness of 1 nm was grown on the photolithographic and developed sample using magnetron sputtering.

[0067] (4) Hydrogen plasma etching: at room temperature, pure hydrogen plasma is used, the power is set to 100W, the flow rate of 10SCCM is adopted, the air pressure is 60Pa, and the etching time is 60 minutes. During the etching process, a vacuum pump is used to keep the...

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Abstract

The invention discloses a graphene strip with neat edges, a preparation method and applications thereof. The preparation method comprises: carrying out lithographic patterning on graphene, growing a metal film on the patterned graphene, removing the metal film, and carrying out hydrogen plasma etching on the patterned graphene to obtain the graphene strip with the neat edges. According to the present invention, the metal grows on the unprotected graphene to generate a large amount of defects so as to greatly increase the etching rate, and then the graphene is subjected to anisotropic etching by the hydrogen plasma, such that the finally obtained graphene strip has the geometry structure mainly based on the zigzag edges so as to make the obtained graphene strip has high carrier mobility andlow resistivity; and the process is simple in the operation, and is compatible with the modern semiconductor processing technology, such that the performance of the device based on the graphene stripcan be expected to be improved, and the application prospects are broad.

Description

technical field [0001] The invention relates to a method for preparing a graphene strip, in particular to a method and application for preparing a graphene strip with zigzag-shaped neat edges by utilizing hydrogen plasma etching combined with coating technology, and belongs to the technical field of nanomaterials. Background technique [0002] Graphene is composed of carbon atoms with sp 2 The honeycomb-like single-atom-layer two-dimensional crystals formed by hybridization are expected to have good application prospects in transparent electrodes, high-performance detectors, optoelectronic devices and wearable devices due to their unique energy band structure and excellent physical properties. However, due to the zero energy gap of graphene, there is no "off" state, which limits its application in the field of semiconductor devices. Graphene strips, especially graphene nanoribbons, as a way to open the energy gap, are also the only way to miniaturize and highly integrate de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194B82Y30/00B82Y40/00
Inventor 刘立伟刘丰奎李奇王汝冰郭玉芬李伟伟
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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