High-quality LED (light emitting diode) manufacturing method

A technology of light-emitting diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve problems such as acid corrosion, failure to be well suppressed, material damage, etc., to achieve The effect of improving quality, avoiding damage, and increasing efficiency

Active Publication Date: 2019-05-31
深圳广盛浩科技有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a method for manufacturing high-quality light-emitting diodes, which has the advantages of environmental protection, safety, and high ef

Method used

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Example Embodiment

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0035] The present invention provides a technical solution: including the following steps:

[0036] S1. Silicon wafer inspection: including wafer type, wafer thickness, wafer state and wafer resistivity, whether the wafer is N-type or P-type, specifically by heating the A needle, the electrons from point A are diffused to point B , The potential of point A is higher than point B, and the galvanometer pointer is shifted to the right, it can be judged that the silic...

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Abstract

The invention discloses a high-quality LED manufacturing method which comprises the following steps of S1) silicon chip inspection; S2) silicon chip cleaning; S3) silicon chip polishing; S4) diffusion; S5) thermal oxidation; S6) photo-etching; S7) alloy sintering; S8) vacuum film coating; S9) angle making in the inclined side; S10) welding; S11) pickling; S12) solidification of white glue; S13) moulding; and S14) post treatment. The method is reasonable in design, a selective diffusion area is etched in a silicon dioxide layer of a silicon chip by thermal oxidation, impurities can be diffusedto the silicon chip in the area, a pneumatic (non-contact) measuring instrument is used for measurement to avoid damage on the surface of the silicon chip, and improve the quality of the raw materialsilicon chip fundamentally, and via silica mechanical polishing, SiO2 colloid generates mechanical friction on the silicon chip, and polishing is used to remove the surface damage layer.

Description

technical field [0001] The invention relates to the technical field of diode manufacture, in particular to a method for manufacturing a high-quality light-emitting diode. Background technique [0002] A diode is a two-terminal device with unidirectional conduction. It is divided into electronic diodes and crystal diodes. Electronic diodes are less efficient than crystal diodes due to the heat loss of the filament, so they are rarely seen now. They are more common and commonly used. is a crystal diode. The unidirectional conduction characteristics of diodes, semiconductor diodes are used in almost all electronic circuits, it plays an important role in many circuits, it is one of the earliest semiconductor devices, and its applications are also very wide. In the manufacturing process of diodes, the cleaning effect of raw material silicon is average, and the Au and Pt metals on the silicon surface are difficult to clean, and it is easy to cause scratches on the surface of sili...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/02H01L21/22H01L21/304H01L21/66
Inventor 邓博强
Owner 深圳广盛浩科技有限公司
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