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Boron diffusion back passivation process for p-type crystalline silicon solar cells

A solar cell and back passivation technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of unstable open circuit voltage and conversion efficiency of cells, unsatisfactory effects, and poor square resistance uniformity. The effect of improving the uniformity of the square resistance, the uniformity of the square resistance between the chips, and the conversion efficiency

Active Publication Date: 2021-10-22
北京捷宸阳光科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current boron diffusion back passivation process is not yet mature, and the effect after back passivation is not very ideal
The uniformity of square resistance after boron diffusion is poor, and the variance is large, resulting in unstable open circuit voltage and conversion efficiency of the cell

Method used

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  • Boron diffusion back passivation process for p-type crystalline silicon solar cells
  • Boron diffusion back passivation process for p-type crystalline silicon solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] ⑴Start: In the equipment preparation stage, the preparation time is 10s, the set temperature in the furnace tube is 800°C, and the flow rate of large nitrogen is 10000scm.

[0041] (2) Boat release: Send the quartz boat loaded with silicon wafers into the furnace tube, the running time is 440s, the temperature in the furnace tube is set at 820°C, and the flow rate of nitrogen is 10000 sccm.

[0042] (3) Heating: the temperature in the furnace tube rises rapidly to 830°C within 200s, and the flow rate of nitrogen in the furnace tube is 10000 sccm.

[0043] (4) Oxidation: The temperature in the furnace tube is set to 830°C, the oxygen flow rate is 900 sccm, the maximum nitrogen flow rate is 10000 sccm, and the oxidation duration is 240s.

[0044] (5) Constant temperature for the first time: The temperature in the furnace tube rises rapidly to 900°C within 600s, and keeps warm after reaching 900°C. The flow rate of large nitrogen in the furnace tube is 10000 sccm.

[0045...

Embodiment 2

[0057] ⑴Start: In the equipment preparation stage, the preparation time is 10s, the set temperature in the furnace tube is 800°C, and the flow rate of large nitrogen is 10000scm.

[0058] (2) Boat release: Send the quartz boat loaded with silicon wafers into the furnace tube, the running time is 440s, the temperature in the furnace tube is set at 820°C, and the flow rate of nitrogen is 10000 sccm.

[0059] (3) Heating: the temperature in the furnace tube rises rapidly to 830°C within 200s, and the flow rate of nitrogen in the furnace tube is 10000 sccm.

[0060] (4) Oxidation: The temperature in the furnace tube is set to 830°C, the oxygen flow rate is 1100 sccm, the maximum nitrogen flow rate is 10000 sccm, and the oxidation duration is 240s.

[0061] (5) Constant temperature for the first time: The temperature in the furnace tube rises rapidly to 900°C within 600s, and keeps warm after reaching 900°C. The flow rate of large nitrogen in the furnace tube is 10000 sccm.

[006...

Embodiment 3

[0074] ⑴Start: In the equipment preparation stage, the preparation time is 10s, the set temperature in the furnace tube is 800°C, and the flow rate of large nitrogen is 10000scm.

[0075] (2) Boat release: Send the quartz boat loaded with silicon wafers into the furnace tube, the running time is 440s, the temperature in the furnace tube is set at 820°C, and the flow rate of nitrogen is 10000 sccm.

[0076] (3) Heating: the temperature in the furnace tube rises rapidly to 830°C within 200s, and the flow rate of nitrogen in the furnace tube is 10000 sccm.

[0077] (4) Oxidation: The temperature in the furnace tube is set to 830°C, the oxygen flow rate is 900 sccm, the maximum nitrogen flow rate is 10000 sccm, and the oxidation duration is 240s.

[0078] (5) Constant temperature for the first time: The temperature in the furnace tube rises rapidly to 900°C within 600s, and keeps warm after reaching 900°C. The flow rate of large nitrogen in the furnace tube is 10000 sccm.

[0079...

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Abstract

The invention discloses a boron diffusion back passivation process for P-type crystalline silicon solar cells, which mainly includes the following steps: utilizing the boron diffusion process, using liquid BBr 3 As a diffused boron source, the silicon wafer is placed in a diffusion furnace. After heating and oxidation, the silicon wafer is subjected to three-step diffusion and three-step push treatment in sequence. Each push is carried out after corresponding diffusion, and finally oxidized and cooled. Complete the back passivation process. The boron diffusion back passivation process for P-type crystalline silicon solar cells described in the present invention can effectively reduce the recombination of light-generated minority carriers on the back of the battery, reduce the recombination rate, and make the effect after passivation better. At the same time, the uniformity of the square resistance of the silicon wafer is improved, the variance of the square resistance is reduced, the open circuit voltage and the conversion efficiency are improved, and the fluctuation of the conversion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of rear passivation of crystalline silicon solar cells in the field of photovoltaics, and in particular relates to a boron diffusion rear passivation process for P-type crystalline silicon solar cells. Background technique [0002] As a renewable clean energy, solar energy is currently the most effective and reliable way to replace fossil energy such as coal and oil. Crystalline silicon solar cells occupy the vast majority of the solar photovoltaic industry. According to the orientation of the crystal plane, crystalline silicon solar cells are divided into monocrystalline silicon solar cells and polycrystalline silicon solar cells. In the market of crystalline silicon solar cells, polycrystalline silicon solar cells occupy the main market due to low price and cost factors, but limited by their own material properties, the conversion efficiency is 1% lower than that of monocrystalline silicon solar cells. In...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18H01L21/228
CPCY02P70/50
Inventor 房强张华灿王军赵钊韩传龙
Owner 北京捷宸阳光科技发展有限公司
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