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Method for controlling large-size FeGa magnetostrictive single crystal to grow on solid-liquid interface

A magnetostrictive, solid-liquid interface technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of weakened one-way heat conduction, insufficient heat exchange, etc., and achieve good comprehensive usability and simple process equipment , less volatile effect

Active Publication Date: 2019-06-11
BEIHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the air gap between the protective shell and the corundum crucible, the heat exchange between the bottom crystal and the cooling liquid is insufficient, and the one-way heat conduction from the solution to the bottom crystal is weakened, causing the solid-liquid interface to change from flat to concave, and the side wall shape appears. Nucleation, formation of heterocrystals, inhibition of single crystal growth

Method used

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  • Method for controlling large-size FeGa magnetostrictive single crystal to grow on solid-liquid interface
  • Method for controlling large-size FeGa magnetostrictive single crystal to grow on solid-liquid interface
  • Method for controlling large-size FeGa magnetostrictive single crystal to grow on solid-liquid interface

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Experimental program
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Effect test

Embodiment 1

[0045] Embodiment 1 prepares 30mmFe 81 Ga 19 single crystal

[0046] The steps adopted in this embodiment are as follows:

[0047] 1) Ingredients

[0048] The purity of the selected raw materials Fe and Ga are both 99.99wt%, and in order to prevent the Ga element from burning during the smelting process, the Fe 81 Ga 19 2wt% Ga was added on the basis of the composition. Specifically, 1547.1 g of Fe and 461.8 g of Ga were weighed for use. Before batching, Fe must be ultrasonically cleaned with absolute ethanol and dried under vacuum to remove the oil on the surface.

[0049] 2) Preparation of master alloy ingot

[0050] Put the above-mentioned weighed raw materials Fe and Ga into the crucible of the vacuum non-consumable arc melting furnace. When placing it, it is necessary to place the Ga element that is easy to burn at the bottom of the crucible, and the Fe element that is not easy to burn at the top of the crucible.

[0051] Vacuumize the vacuum non-consumable arc me...

Embodiment 2

[0063] Embodiment 2 prepares 40mmFe 81 Ga 19 single crystal

[0064] The steps adopted in this embodiment are as follows:

[0065] 1) Ingredients

[0066] The purity of the selected raw materials Fe and Ga is greater than 99.99wt%, and in order to prevent the Ga element from burning during the smelting process, the Fe 81 Ga 19 2wt% Ga was added on the basis of the composition. Specifically, 1547.1 g of Fe and 461.8 g of Ga were weighed for use. Before batching, Fe must be ultrasonically cleaned with absolute ethanol and dried under vacuum to remove the oil on the surface.

[0067] 2) Preparation of master alloy ingot

[0068] Put the above-mentioned weighed raw materials Fe and Ga into the crucible of the vacuum non-consumable arc melting furnace. When placing it, it is necessary to place the Ga element that is easy to burn at the bottom of the crucible, and the Fe element that is not easy to burn at the top of the crucible.

[0069] Vacuumize the vacuum non-consumable...

Embodiment 3

[0080] Embodiment 3 prepares 50mmFe 81 Ga 19 single crystal

[0081] The steps adopted in this embodiment are as follows:

[0082] 1) Ingredients

[0083] The purity of the selected raw materials Fe and Ga is greater than 99.99wt%, and in order to prevent the Ga element from burning during the smelting process, the Fe 81 Ga 19 2wt% Ga was added on the basis of the composition. Specifically, 1547.1 g of Fe and 461.8 g of Ga were weighed for use. Before batching, Fe must be ultrasonically cleaned with absolute ethanol and dried under vacuum to remove the oil on the surface.

[0084] 2) Preparation of master alloy ingot

[0085] Put the above-mentioned weighed raw materials Fe and Ga into the crucible of the vacuum non-consumable arc melting furnace. When placing it, it is necessary to place the Ga element that is easy to burn at the bottom of the crucible, and the Fe element that is not easy to burn at the top of the crucible.

[0086] Vacuumize the vacuum non-consumable...

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Abstract

The invention provides a method for controlling a large-size FeGa magnetostrictive single crystal to grow on a solid-liquid interface. The method comprises the following steps: 1) carrying out proportioning according to target components; 2) smelting a mother alloy by using a vacuum non-consumable electric arc smelting furnace; 3) melting a mother alloy ingot by utilizing a magnetic suspension induction smelting furnace, and carrying out casting to form mother alloy bars; and 4) placing the mother alloy bars and FeGa single-crystal seed crystals in a double-layer crucible, placing the double-layer crucible into directional solidification equipment, carrying out heating to completely melt the mother alloy bars and melt the upper part of the FeGa single-crystal seed crystals, and pulling thelower part of the melted material into a cooling liquid along the lower part of the FeGa single-crystal seed crystals to carry out directional solidification, so that the large-size FeGa magnetostrictive material is prepared. The method is simple in process equipment and is convenient to operate, a prepared FeGa single crystal saturated magnetic field is only 500 Oe, the magnetostrictive coefficient is up to 300-320 ppm, comprehensive usability is good, and the application prospect is wide.

Description

technical field [0001] The invention relates to the field of single crystal growth, in particular to a method for growing a large-size FeGa magnetostrictive single crystal by controlling a solid-liquid interface. Background technique [0002] The length and volume of ferromagnetic materials and ferrimagnetic materials can change under the action of an external magnetic field due to the change of their own magnetization state. This phenomenon is called magnetostriction, which was discovered by Joule in 1842. Magnetostrictive materials with this effect are important new magnetically driven smart materials, which can realize the mutual conversion of electromagnetic energy and mechanical energy. Magnetostrictive materials have the advantages of high mechanical energy-electromagnetic energy conversion efficiency, high energy density, and high response frequency, and the prepared magnetostrictive devices have strong reliability and simple driving methods. Magnetostrictive materia...

Claims

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Application Information

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IPC IPC(8): C30B29/52C30B11/00
Inventor 蒋成保陈艺骏王敬民刘敬华张天丽
Owner BEIHANG UNIV
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