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Rare earth doped sesquioxide submicron X ray imaging monocrystalline film scintillation screen, and preparation method thereof

A sesquioxide and single crystal thin film technology, which is applied in the field of single crystal thin film scintillation screens for submicron X-ray imaging, can solve problems such as low luminous efficiency, solvent impurity pollution, and difficulty in preparing single crystal thin films, and achieve optical properties and Blink high performance, high quality effects

Inactive Publication Date: 2019-06-14
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

(Journal of Synchrotron Radiation.(2006).13,180-194), Lu 2 o 3 The melting point is 2400°C, and the preparation of single crystal thin films is difficult. 2 o 3 : The preparation of Eu single crystal scintillators is mainly obtained by the liquid phase external research method, which has the problems of solvent impurity contamination and low luminous efficiency (PhD thesis: Development of new thin film scintillators for high-resolution X-ray imaging)

Method used

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  • Rare earth doped sesquioxide submicron X ray imaging monocrystalline film scintillation screen, and preparation method thereof
  • Rare earth doped sesquioxide submicron X ray imaging monocrystalline film scintillation screen, and preparation method thereof

Examples

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Effect test

Embodiment example 1

[0048] Implementation Case 1: (Lu 0.9 Eu 0.1 ) 2 o 3 / YSZ(100) flashing screen

[0049] Such as figure 1 As shown, the selected laser-enhanced chemical vapor deposition is as follows figure 1 device shown. According to above-mentioned preparation process in raw material tank 2 organic matter is pressed (Lu (dpm) 3 : Eu(dpm) 3 =90at%: 10at%) to weigh the ingredients, a total of 1g, after mixing evenly, pour into the tank source and put into the raw material tank 2. A YSZ (100) single crystal substrate having a size of 10 x 10 x 0.5 mm was placed on the substrate 7 . The substrate 7 is then placed on the sample stage 6, which is adjusted to be under the laser light. The CVD chamber 5 is vacuumed with a vacuum pump 10 . The substrate 7 is heated to 1100° C., and the heating rate of the substrate 7 cannot exceed 10° C. / min. When the substrate 7 exceeds 400°C, the heating of the nozzle 9 and the input pipe is started. When the substrate 7 exceeds 900°C, the raw material...

Embodiment example 2

[0050] Implementation case 2: (Y 0.9 Tb 0.1 ) 2 o 3 / Y 2 o 3 (100) flash screen

[0051] Such as figure 1 As shown, the organic matter is in accordance with (Y(dpm) 3 : Tb(dpm) 3 =90at%: 10at%) carry out weighing batching, altogether 1.5g, pour into tank source after mixing evenly and put into raw material tank 2. Put a Y of size 10 x 10 x 0.5mm 2 o 3 A (100) single crystal substrate is placed on the substrate 7 . The substrate 7 is then placed on the sample stage 6, which is adjusted to be under the laser light. The CVD chamber 5 is vacuumed with a vacuum pump 10 . The substrate 7 is heated to 1100° C., and the heating rate of the substrate 7 cannot exceed 10° C. / min. When the substrate 7 exceeds 400° C., the nozzle 9 and the input pipeline are heated. When the substrate 7 exceeds 900°C, the raw material tank 2 is heated, and the temperature of the raw material tank 2 is set to 190°C. The temperature of the nozzle 9 and the input pipeline is about 50° C. higher...

Embodiment example 3

[0052] Implementation case 3: (Lu 0.95 PR 0.05 ) 2 o 3 / YSZ(100) flashing screen

[0053] Such as figure 1 As shown, the organic matter is divided according to (Lu(dpm) 3 : Pr(dpm) 3 =95at%: 5at%) carry out weighing batching, totally 2g, pour into tank source after mixing evenly and put into raw material tank 2. A YSZ (100) single crystal substrate having a size of 10 x 10 x 0.5 mm was placed on the substrate 7 . The substrate 7 is then placed on the sample stage 6, which is adjusted to be under the laser light. The CVD chamber 5 is vacuumed with a vacuum pump 10 . The substrate 7 is heated to 1100° C., and the heating rate of the substrate 7 cannot exceed 10° C. / min. When the substrate 7 exceeds 400° C., the nozzle 9 and the input pipeline are heated. When the substrate 7 exceeds 900°C, the raw material tank 2 is heated, and the temperature of the raw material tank 2 is set to 200°C. The temperature of the nozzle 9 and the input pipeline is about 50° C. higher than...

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Abstract

The invention discloses a rare earth doped sesquioxide submicron X ray imaging monocrystalline film scintillation screen, and a preparation method thereof. The rare earth doped sesquioxide submicron Xray imaging monocrystalline film scintillation screen is prepared through growth of rare earth doped sesquioxide on an appropriate monocrystalline substrate, the structure is (Lu<1-x-y>M<x>RE<y>)<2>O<3>, wherein, 0<=x<=1, 0<y<=0.3, Re is used for representing one or a plurality of components selected from Eu, Tb, and Pr, M is used for representing one or a plurality of components selected from Sc, Y, La, Gd, and Hf. The rare earth doped sesquioxide submicron X ray imaging monocrystalline film scintillation screen is large in density; Lu2O3 density is as high as 9.42g / cm3, the narrowband emission of Eu at 611nm matches CCO responsive curve. The preparation method possesses following advantages: no raw material pollution problem is caused, monocrystalline film quality is high, optical properties and scintillation performance are excellent; and the rare earth doped sesquioxide submicron X ray imaging monocrystalline film scintillation screen can be widely used in the fields such as scientific research, medical industry, safety check, and industrial industry.

Description

technical field [0001] The present application relates to a single crystal thin film scintillation screen for submicron X-ray imaging, in particular to a rare earth-doped sesquioxide single crystal thin film scintillation screen for submicron X-ray imaging and its preparation method. Background technique [0002] Microscopic X-ray imaging technology is mainly realized by scintillation single crystal thin film scintillation screen, X-ray source, micro-optical lens (objective lens and eyepiece), and charge-coupled device (CCD). This microscopic imaging technology has the advantages of submicron resolution, high detection efficiency, high degree of digitization, and online real-time detection. It plays an important role in the field of microscopic X-ray imaging such as phase contrast imaging, holographic imaging, and microtomography effect. [0003] The scintillation screen is one of the key factors determining the spatial and temporal resolution of an X-ray imaging system. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B25/00C23C16/40C23C16/455G01N23/04
Inventor 冯鹤常靖宇张志军徐展赵景泰
Owner SHANGHAI UNIV
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