Composite substrate, surface acoustic wave device, and method for manufacturing composite substrate
A technology for composite substrates and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as cracks and inability to handle them, and achieve the effect of improving the Q value
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Embodiment 1
[0086] An LT substrate having a diameter of 6 inches and having a Ra (arithmetic mean roughness) of about 230 nm (P-V of about 1.7 μm) was prepared as a piezoelectric single crystal substrate. On this LT substrate, SiO with a thickness of about 10 μm is deposited by plasma CVD using silane and oxygen as raw material gases. 2 membrane. The SiO 2 The film is heat-treated at about 400°C, polished to make it a mirror surface, and the SiO 2 The film was finished to a film thickness of about 2 μm.
[0087] In addition, a Si substrate having a diameter of 6 inches on which a thermally oxidized film of 500 nm was grown was prepared as a support substrate. Then, for the attached SiO 2 Both the LT substrate of the film and the Si substrate on which the thermal oxide film was grown were subjected to plasma surface activation. Then, the two substrates are bonded together, heat treatment is applied at 120°C, and then the LT is thinned to about 20 μm by grinding and grinding. exist ...
Embodiment 2
[0093] An LT substrate having a diameter of 6 inches and having a roughness of Ra of about 230 nm (P-V of about 1.7 μm) was prepared. Spin-coating an organosilicon compound solution on the LT substrate and heating at 350°C was repeated several times to obtain SiO with a thickness of about 5 μm.2 Floor. The organosilicon compound solutions used here are two types of perhydropolysilazane (solvent: dibutyl ether) and methyltrimethoxysilane (solvent: propylene glycol monoethyl ether).
[0094] the SiO 2 After the film is heat-treated at about 400° C., it is polished to a mirror surface. In addition, a Si substrate having a diameter of 6 inches on which a thermally oxidized film of 500 nm was grown was prepared. Plasma surface activation is performed on both substrates. Then, the two substrates were bonded together, a heat treatment of 120°C was applied, and then the LT was thinned to about 20 μm by grinding and grinding to obtain a composite substrate.
[0095] A wafer of this...
Embodiment 3
[0099] An LT substrate having a diameter of 6 inches and having a roughness of Ra of about 230 nm (P-V of about 1.7 μm) was prepared. On this LT substrate, SiO with a thickness of about 10 μm was formed by the PVD method (magnetron sputtering method here). 2 membrane. the SiO 2 After the film is heat-treated at about 400° C., it is polished to a mirror surface. In addition, a Si substrate having a diameter of 6 inches on which a thermally oxidized film of 500 nm was grown was prepared. Plasma surface activation is performed on both substrates. Then, the two substrates were bonded together, a heat treatment of 120°C was applied, and then the LT was thinned to about 20 μm by grinding and grinding to obtain a composite substrate.
[0100] A wafer of this composite substrate was cut into 2 mm squares, and a heat resistance test was investigated by reciprocating a heating plate at 200° C. and a cooling stand made of metal (holding each for 30 seconds on the heating plate and co...
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Abstract
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