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Preparation method of novel chip thermal interface material based on carbon nano tube array

A technology of carbon nanotube array and thermal interface material, which is applied in the direction of metal material coating process, superimposed layer plating, and device for coating liquid on the surface, etc. Low coefficient and other problems, to achieve the effect of strong binding force, clean and smooth surface, high surface density

Inactive Publication Date: 2019-06-18
杭州英希捷科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are problems such as easy curing and deterioration during long-term use, low thermal conductivity, and completely inapplicable to liquid heat transfer media.

Method used

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  • Preparation method of novel chip thermal interface material based on carbon nano tube array
  • Preparation method of novel chip thermal interface material based on carbon nano tube array
  • Preparation method of novel chip thermal interface material based on carbon nano tube array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Provide a smooth metal foil substrate, the metal foil substrate is selected from aluminum foil, the thickness is about 8 microns, and the surface roughness is less than 300 nanometers, so that the catalyst layer for subsequent carbon nanotube growth can be evenly attached to the substrate surface.

[0026] A layer of catalyst is formed on the upper and lower surfaces of the substrate. The catalyst is deposited on the substrate by magnetron sputtering method, and the thickness thereof is preferably 5 nanometers. The catalyst is made of iron, and a layer of about 3nm aluminum oxide isolation layer is sputtered between the catalyst and the metal substrate by magnetron sputtering, which makes the prepared carbon nanotube array and the substrate have a stronger binding force.

[0027] Put the metal substrate formed with the catalyst layer into the reaction furnace, suspend the metal substrate with a bracket, pass the reaction gas into the furnace, and use the plasma chemical...

Embodiment 2

[0036] Provide a smooth metal foil substrate, the metal foil substrate is selected from aluminum foil, the thickness is about 8 microns, and the surface roughness is less than 300 nanometers, so that the catalyst layer for subsequent carbon nanotube growth can be evenly attached to the substrate surface.

[0037] A layer of catalyst is formed on the upper and lower surfaces of the substrate. The catalyst is deposited on the substrate by magnetron sputtering method, and the thickness thereof is preferably 5 nanometers. The catalyst is made of iron, and a layer of about 3nm aluminum oxide isolation layer is sputtered between the catalyst and the metal substrate by magnetron sputtering, which makes the prepared carbon nanotube array and the substrate have a stronger binding force.

[0038] Put the metal substrate formed with the catalyst layer into the reaction furnace, suspend the metal substrate with a bracket, pass the reaction gas into the furnace, and use the plasma chemical...

Embodiment 3

[0041] Provide a smooth metal foil substrate, the metal foil substrate is selected from aluminum foil, the thickness is about 8 microns, and the surface roughness is less than 300 nanometers, so that the catalyst layer for subsequent carbon nanotube growth can be evenly attached to the substrate surface.

[0042] A layer of catalyst is formed on the upper and lower surfaces of the substrate. The catalyst is deposited on the substrate by magnetron sputtering method, and the thickness thereof is preferably 5 nanometers. The catalyst is made of iron, and a layer of about 3nm aluminum oxide isolation layer is sputtered between the catalyst and the metal substrate by magnetron sputtering, which makes the prepared carbon nanotube array and the substrate have a stronger binding force.

[0043] Put the metal substrate formed with the catalyst layer into the reaction furnace, suspend the metal substrate with a bracket, pass the reaction gas into the furnace, and use the plasma chemical...

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Abstract

The invention discloses a preparation method of a novel chip thermal interface material based on a carbon nano tube array. A metal foil with the thickness of about 6-12 microns is taken, catalyst layers are sputtered on the two surfaces of the metal foil, and aluminum oxide isolation layers are sputtered in the middle of the catalyst layers and the metal foil by a magnetron sputtering method; reaction gas is introduced, and the carbon nano tube array simultaneously grows from the upper surface and the lower surface of a base under a certain temperature condition by adopting a chemical vapor deposition method, a colloid drops the surface of the carbon nano tube after growing, and spin coating is performed on the surface of the carbon nano tube by adopting a spin coating method to prepare anovel chip thermal interface material. The carbon nanotube array prepared by the preparation method is clean and smooth in surface and strong in binding force with a substrate, the surface density ishigh, and the chip thermal interface material has excellent performances such as high density, high consistency, high thermal conductivity and the like.

Description

technical field [0001] The invention relates to a method for preparing a chip thermal interface material, in particular to a method for preparing a novel chip thermal interface material based on a carbon nanotube array. Background technique [0002] The semiconductor integrated circuit manufacturing process has developed from a 100-nanometer process to the current 10-nanometer process, and the chip power density has risen sharply, getting closer and closer to the admitted limit of 150W / cm2. The thermal problem of high-performance chips has become a constraint on chip work efficiency. one of the key problems. [0003] Traditional thermal interface materials are not conducive to large-scale heat transfer. When the internal heat of the chip accumulates to a certain extent in the chip substrate, microscopic displacements will occur between the transistor materials, which will further lead to holes, cracks, and even final shedding. The original design The structure is damaged, l...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/16C23C14/35C23C16/26C23C16/56C23C28/00B05D7/24
Inventor 汪小知张亮吴永志
Owner 杭州英希捷科技有限责任公司