Heat shielding assembly, crystal pulling furnace system and working method of crystal pulling furnace system

Abstract

The invention provides a heat shielding assembly, a crystal pulling furnace system and a working method of the crystal pulling furnace system. The heat shielding assembly is arranged inside a furnacehearth of a crystal pulling furnace, the furnace hearth of the crystal pulling furnace is internally provided with a crucible for holding materials and a seed chuck, and the seed chuck is used for fixing a seed crystal or the heat shielding assembly. The heat shielding assembly comprises a heat shielding body and a reverse heat radiation material piece, wherein one end of the heat shielding body faces the crucible, the other end of the heat shielding body is detachably connected with the seed chuck, and the seed chuck can move so as to drive the heat shielding body to move in the axial direction of the furnace hearth of the crystal pulling furnace through a pulling rope; the reverse heat radiation material piece is arranged on the side, facing the crucible, of the heat shielding body. According to the heat shielding assembly provided by the invention, high-temperature heat radiation of reflection material melt liquid can be reflected effectively, the axial temperature gradient inside the crystal pulling furnace is increased, and rapid fusion of the material is promoted. The heat shielding assembly is in a cap form, and sputtering liquid during material fusion can be accommodated and returned back into the original melt liquid.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon manufacturing, and more specifically, to a heat shield assembly, a crystal pulling furnace system and a working method of the crystal pulling furnace system. Background technique [0002] As methods for manufacturing single crystal silicon, there are zone melting method and Czochralski method. In the prior art, the Czochralski method (ie, CZ method) is usually used to prepare single crystal silicon. The CZ method is to house the polysilicon raw material in a quartz crucible set in the hearth of the crystal pulling furnace, heat and melt it through a graphite heater, and then put a rod-shaped seed crystal (called a seed crystal) with a diameter of only 10mm in contact with the polysilicon molten liquid surface , at the appropriate temperature required by the process, the silicon atoms in the melt will follow the silicon atom arrangement structure of the seed crystal to form regular ...

AI Technical Summary

Problems solved by technology

[0003] Generally speaking, in order to control the temperature gradient change in the crystal pulling furnace and to affect the growth of good quality single crystal silicon rods, generally in the crystal pulling furnace furnace A bowl-like heat shield assembly is provided, and the upper and lower ends are in the shape of concentric circle openings. It mainly includes an external reflector and an internal reflector, which are mainly used for temperature control during the equal-diameter growth of single crystal silicon rods, but for The effect is not obvious when polysilicon raw materials are melted, especially when it comes to the growth of large-sized monocrystalline silicon rods, the size of the central opening becomes significantly larger, which cannot effectively store energy and heat insulation

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