A quantum dot photodetector based on atomic layer deposition and its preparation method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAZHONG UNIV OF SCI & TECH
- Publication Date
- 2020-12-29
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Abstract
Description
technical field
[0001] The invention belongs to the field of optical material preparation, and more specifically relates to a quantum dot photodetector based on atomic layer deposition and a preparation method thereof. Background technique
[0002] Quantum dots, also known as nanocrystals, are nanoparticles composed of II-VI or III-V elements. The particle size of quantum dots is generally between 1nm and 10nm. Since electrons and holes are quantum-confined, the continuous energy band structure becomes a discrete energy level structure with molecular characteristics, which can emit fluorescence after being excited. The emission spectrum of quantum dots can be controlled by changing the size of the quantum dots. It has good photostability, wide excitation spectrum and narrow emission spectrum. It has a wide range of applications in the fields of solar cells, light-emitting devices, and optical biomarkers. application prospects.
[0003] At present, in the field of quantum d...